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1N4448W PDF预览

1N4448W

更新时间: 2024-10-29 22:37:55
品牌 Logo 应用领域
WTE 二极管开关
页数 文件大小 规格书
3页 43K
描述
SURFACE MOUNT FAST SWITCHING DIODE

1N4448W 数据手册

 浏览型号1N4448W的Datasheet PDF文件第2页浏览型号1N4448W的Datasheet PDF文件第3页 
WTE  
POWER SEMICONDUCTORS  
1N4448W  
SURFACE MOUNT FAST SWITCHING DIODE  
Features  
!
High Conductance  
!
!
Fast Switching Speed  
Surface Mount Package Ideally Suited for  
Automatic Insertion  
For General Purpose Switching Application  
Plastic Material – UL Recognition Flammability  
Classification 94V-O  
A
SOD-123  
Dim  
A
Min  
3.6  
2.5  
1.4  
0.5  
Max  
3.9  
!
!
C
B
2.8  
D
C
1.8  
B
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
D
0.7  
E
0.2  
E
G
H
0.4  
0.95  
Mechanical Data  
!
!
H
1.35  
0.12  
Case: SOD-123, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.01 grams (approx.)  
Marking: A3  
G
J
J
All Dimensions in mm  
!
!
!
Maximum Ratings @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Non-Repetitive Peak Reverse Voltage  
VRM  
100  
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
75  
V
RMS Reverse Voltage  
VR(RMS)  
IFM  
53  
V
Forward Continuous Current (Note 1)  
Average Rectified Output Current (Note 1)  
500  
250  
mA  
mA  
IO  
Non-Repetitive Peak Forward Surge Current  
@ t = 1.0µs  
@ t = 1.0s  
4.0  
2.0  
IFSM  
A
Power Dissipation (Note 1)  
Pd  
500  
357  
mW  
K/W  
°C  
Typical Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
RJA  
Tj, TSTG  
-65 to +150  
Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Forward Voltage Drop  
Peak Reverse Leakage Current  
@ IF = 5mA  
@ IF = 10mA  
0.72  
1.0  
VFM  
V
@ VR = 20V  
@ VR = 75V  
25  
5.0  
nA  
µA  
IRM  
Typical Junction Capacitance (VR = 0V DC, f = 1.0MHz)  
Reverse Recovery Time (Note 2)  
Cj  
trr  
4.0  
4.0  
pF  
nS  
Note: 1. Valid provided that terminals are kept at ambient temperature.  
2. Measured with IF = IR = 10mA, IRR = 0.1 x IR, RL = 100.  
1N4448W  
1 of 3  
© 2002 Won-Top Electronics  

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