Datasheet > 1N4448W

1N4448W

更新时间： 2024-10-30 12:52:23

品牌	Logo	应用领域
戈采 - FCI		二极管开关
页数	文件大小	规格书
3页	78K
描述
High Speed Switching Diode SURFACE MOUNT PACKAGE

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中文翻译

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1N4448W 数据手册

1N4448W High Speed

Switching Diode

Data Sheet

Description

Mechanical Dimensions

INCHES

DIM

MIN MAX MIN MAX

0.055 0.071

0.100 0.112

0.037 0.053

0.020 0.028

0.004

1.40 1.80

2.55 2.85

0.95 1.35

0.50 0.70

0.25

0.000 0.004 0.00 0.10

SOD-123

0.006

0.15

3.85

0.140 0.152

3.55

1. CATHODE 2. ANODE

Features

n SURFACE MOUNT PACKAGE

n FAST SWITCHING DIODE

n MEETS UL SPECIFICATION

n ELECTRICALLY IDENTICAL TO

94V-0

JEDEC 1N4448

Electrical Characteristics @ 25^OC.

Units

Maximum Ratings

Peak Reverse Voltage...V_RM

RMS Reverse Voltage...V_R(rms)

1N4448W

100

Volts

Average Rectified Current...I_F(AV)

Peak Forward Surge Current...I_FSM

Power Dissipation...P_D

............................................. 150 ...............................................

............................................. 500 ...............................................

mAmps

............................................. 500 ...............................................

............................................. 450 ...............................................

°C/W

Thermal Resistence...R_θJA

..................................... -65 to 150 ......................................

°C

Storage and Operating Temperature Range...T_{STRG & J}

Electrical Characteristics T_J= 25 °C

............................................. 1.0 ...............................................

Volts

Forward Voltage...V_F

@ I_F= 10 mA

............................................. 25.0 ...............................................

............................................. 5.0 ...............................................

............................................. 50 ...............................................

DC Reverse Current...I_R@ V_R= 20V

@ V_R= 75V

nAmps

µAmps

V_R= 20V, T_J= 150°C

Typical Junction Capacitance...C_J

Voltage Rise When switched ON

( 50 mA Pulses)

.............................................

...............................................

............................................. 2.5 ...............................................

Reverse Recovery Time...T_RR

Rectification Efficiency...ηv

............................................. 4.0 ...............................................

............................................. 0.45 min .........................................

12 3

中文翻译

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与1N4448W相关器件

型号	品牌	获取价格	描述	数据表
1N4448W_	DIODES	获取价格	FAST SWITCHING SURFACE MOUNT DIODE
1N4448W_05	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
1N4448W_06	WTE	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
1N4448W_08	BL Galaxy Electrical	获取价格	Fast switching Diode
1N4448W_1	TSC	获取价格	Fast Switching Surface Mount Diode
1N4448W_10	DIODES	获取价格	FAST SWITCHING SURFACE MOUNT DIODE
1N4448W_10	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
1N4448W_12	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
1N4448W_13	MCC	获取价格	500mW 100 Volts Switching Diode
1N4448W_15	DIODES	获取价格	FAST SWITCHING SURFACE MOUNT DIODE

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