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1N4448W PDF预览

1N4448W

更新时间: 2024-01-07 19:04:34
品牌 Logo 应用领域
威伦 - WILLAS 二极管
页数 文件大小 规格书
3页 428K
描述
SOD-123 Plastic-Encapsulate Diodes

1N4448W 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.58配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

1N4448W 数据手册

 浏览型号1N4448W的Datasheet PDF文件第2页浏览型号1N4448W的Datasheet PDF文件第3页 
WILLAS  
1N4448W  
SOD-123 Plastic-Encapsulate Diodes  
FAST SWITCHING DIODE  
FEATURES  
SOD-123  
z
z
z
Fast Switching Speed  
Surface Mount Package Ideally Suited for Automatic Insertion  
For General Purpose Switching Applications  
High Conductance  
z
z
Pb-Free package is available  
RoHS product for packing code suffix ”G”  
Halogen free product for packing code suffix “H”  
z
Moisture Sensitivity Level 1  
Polarity: Color band denotes cathode end  
z
MARKING: T5 & A3  
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25  
Parameter  
Symbol  
Limit  
Unit  
Non-Repetitive Peak Reverse Voltage  
VRM  
100  
V
Peak Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
75  
V
RMS Reverse Voltage  
VR(RMS)  
IFM  
53  
V
Forward Continuous Current  
Average Rectified Output Current  
500  
250  
mA  
mA  
IO  
Peak Forward Surge Current @t=1.0μs  
@t =1.0s  
4.0  
IFSM  
Pd  
A
1.5  
Power Dissipation  
500  
mW  
/W  
Thermal Resistance Junction to  
Ambient  
RθJA  
TSTG/Tj  
250  
Storage Temperature and Junction Temperature  
-55~+150  
Electrical Ratings @Ta=25℃  
Parameter  
Symbol  
V (BR)R  
VF1  
Min  
75  
Typ  
Max  
Unit  
V
Conditions  
IR=10μA  
IF=5mA  
Reverse Breakdown Voltage  
0.62  
0.72  
0.855  
1.0  
V
VF2  
V
IF=10mA  
IF=100mA  
IF=150mA  
VR=75V  
Forward Voltage  
Reverse Current  
VF3  
V
VF4  
1.25  
2.5  
V
IR1  
μA  
nA  
pF  
IR2  
25  
VR=20V  
Capacitance Between Terminals  
CT  
4
VR=0V,f=1MHz  
IF=IR=10mA  
Reverse Recovery Time  
trr  
4
ns  
Irr=0.1XIR,RL=100Ω  
2012-12  
WILLAS ELECTRONIC CORP.  

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