Datasheet > 1N4448W

1N4448W

更新时间： 2024-10-30 07:07:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		开关
页数	文件大小	规格书
2页	651K
描述
Fast Switching Speed

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中文翻译

获取价格

数据手册

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1N4448W 数据手册

1N4448W

SOD-123

FEATURES

MARKING: T5

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃

Parameter

Symbol

Limits

Unit

Non-Repetitive Peak reverse voltage

V_RM

100

Peak Repetitive Peak reverse voltage

Working Peak

V_RRM

V_RWM

V_R

DC Blocking

Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

Average Rectified Output Current

500

250

I_O

Peak forward surge current @=1.0μs

4.0

I_FSM

@=1.0s

1.5

Power Dissipation

500

250

℃/W

℃

Thermal Resistance Junction to

Ambient

R_θJA

T_STG

Storage temperature

-65~+150

Electrical Ratings @T_A=25℃

Parameter

Symbol

V _(BR)R

V_F1

Min.

Typ.

Max. Unit

Conditions

IR=10μA

I_F=5mA

Reverse Breakdown Voltage

0.62

0.72

0.855

1.0

V_F2

I_F=10mA

I_F=100mA

I_F=150mA

V_R=75V

Forward voltage

V_F3

V_F4

1.25

2.5

I_R1

μA

Reverse current

I_R2

V_R=20V

Capacitance between terminals

Reverse Recovery Time

C_T

V_R=0V,f=1MHz

I_F=I_R=10mA

t_rr

Irr=0.1XI_R,R_L=100Ω

中文翻译

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1N4448W_10	PANJIT	获取价格	SURFACE MOUNT SWITCHING DIODES
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