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1N4150T50R PDF预览

1N4150T50R

更新时间: 2024-11-14 20:05:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
3页 27K
描述
Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35

1N4150T50R 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.42
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.62 VJEDEC-95代码:DO-35
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:4 A
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.006 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N4150T50R 数据手册

 浏览型号1N4150T50R的Datasheet PDF文件第2页浏览型号1N4150T50R的Datasheet PDF文件第3页 
Discr ete P OWER & Sign a l  
Tech n ologies  
1N4150 / FDLL4150  
COLOR BAND MARKING  
DEVICE  
1ST BAND 2ND BAND  
FDLL4150 BLACK  
ORANGE  
LL-34  
THE PLACEMENT OF THE EXPANSION GAP  
HAS NO RELATIONSHIP TO THE LOCATION  
OF THE CATHODE TERMINAL  
DO-35  
High Conductance Ultra Fast Diode  
Sourced from Process 1R. See MMBD1201-1205 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
WIV  
Working Inverse Voltage  
Average Rectified Current  
DC Forward Current  
50  
V
IO  
200  
400  
600  
mA  
mA  
mA  
IF  
Recurrent Peak Forward Current  
if  
Peak Forward Surge Current  
Pulse width = 1.0 second  
if(surge)  
1.0  
4.0  
A
A
Pulse width = 1.0 microsecond  
Storage Temperature Range  
-65 to +200  
C
°
Tstg  
TJ  
Operating Junction Temperature  
175  
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
1N / FDLL 4150  
PD  
Total Device Dissipation  
Derate above 25 C  
Thermal Resistance, Junction to Ambient  
500  
3.33  
300  
mW  
mW/ C  
°
°
Rθ  
C/W  
°
JA  
ã 1997 Fairchild Semiconductor Corporation  

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