Datasheet > 1N4150_07

1N4150_07

更新时间： 2024-10-01 06:18:11

品牌	Logo	应用领域
威世 - VISHAY		二极管开关
页数	文件大小	规格书
4页	114K
描述
Small Signal Fast Switching Diodes

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中文翻译

获取价格

数据手册

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1N4150_07 数据手册

1N4150

Vishay Semiconductors

Small Signal Fast Switching Diodes

Features

• Silicon Epitaxial Planar Diode

• Low forward voltage drop

• High forward current capability

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

94 9367

Applications

• High speed switch and general purpose use in

computer and industrial applications

Mechanical Data

Case: DO35 Glass case

Weight: approx. 125 mg

Cathode Band Color: black

Packaging Codes/Options:

TR/10 k per 13" reel (52 mm tape), 50 k/box

TAP/10 k per Ammopack (52 mm tape), 50 k/box

Parts Table

Part

Ordering code

Type Marking

1N4150

Remarks

1N4150

1N4150-TR or 1N4150-TAP

Tape and Reel/Ammopack

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Value

Unit

Repetitive peak reverse voltage

Reverse voltage

V_RRM

V_R

Peak forward surge current

Average peak forward current

Forward continuous current

Average forward current

Power dissipation

t_p= 1 µs

I_FSM

I_FRM

I_F

600

300

150

440

500

V_R= 0

I_FAV

P_tot

l = 4 mm, T_L= 45 °C

l = 4 mm, T_L≤ 25 °C

Thermal Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Value

Unit

K/W

Thermal resistance junction to ambient air l = 4 mm, T_L= constant

Junction temperature

R_thJA

T_j

350

175

°C

Storage temperature range

T_stg

- 65 to + 175

Document Number 85522

Rev. 1.7, 16-Feb-07

www.vishay.com

12 3 4

中文翻译

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