Datasheet > 1N4150D7/10K

1N4150D7/10K

更新时间： 2024-01-29 23:15:40

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
1页	41K
描述
Rectifier Diode, 1 Element, 0.2A, 50V V(RRM),

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技术参数
数据手册

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1N4150D7/10K 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.6	Is Samacsys：	N
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1 V	元件数量：	1
最高工作温度：	200 °C	最大输出电流：	0.2 A
最大重复峰值反向电压：	50 V	子类别：	Rectifier Diodes
表面贴装：	NO	Base Number Matches：	1

1N4150D7/10K 数据手册

1N4150

Small-Signal Diode

DO-204AH (DO-35 Glass)

Features

• Silicon Epitaxial Planar Diode

• For general purpose and switching

• This diode is also available in other case styles

including the SOD-123 case with the type

designation 1N4150W, and the MiniMELFcase with

the type designation LL4150.

Mechanical Data

Case: DO-35 Glass Case

Weight: approx. 0.13g

Packaging Codes/Options:

D7/10K per 13” reel (52mm tape), 20K/box

D8/10K per Ammo tape (52mm tape), 20K/box

F2/10K per Ammo tape (52mm tape), 50K/box

F3/10K per 13” reel (52mm tape), 50K/box

Dimensions in inches and (millimeters)

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_RM

I_F(AV)

P_tot

Limit

Unit

Peak Reverse Voltage

Maximum Average Rectified Current

Maximum Power Dissipation at T_amb= 25°C

Maximum Junction Temperature

Maximum Forward Voltage Drop at I_F= 200mA

Maximum Reverse Current at V_R= 50V

200

500

200

1.0

°C

T_j

V_F

I_R

100

Maximum Reverse Recovery Time

at I_F= I_R= 10 to 200mA to 0.1I_F

t_rr

4.0

Electrical Characteristics(T_J= 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

I_{F =}200mA

V_R= 50V

Min

Typ

—

Max

1.0

Unit

Forward Voltage Drop

Reverse Current

V_F

I_R

—

100

I_F= I_R= 10 to 200mA

to 0.1I_F

Reverse Recovery Time

t_rr

—

4.0

4/21/00

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