Datasheet > 1N4150PF

1N4150PF

更新时间： 2024-11-15 14:52:27

品牌	Logo	应用领域
先科 - SWST		开关小信号开关二极管
页数	文件大小	规格书
2页	708K
描述
小信号开关二极管

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1N4150PF 数据手册

1N4150PF

Silicon Epitaxial Planar Switching Diode

Max. 0.5

Min. 27.5

Features

Max. 1.9

• Lead Free

Black

Cathode Band

• Fast switching speed

• High reliability

Black

Part No.

Black

"ST" Brand

XXX ^{Max. 3.9}

Applications

Min. 27.5

• For general purpose switching applications

Glass Case DO-35

Dimensions in mm

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RM

Value

Unit

Non-Repetitive Peak Reverse Voltage

300

Forward Continuous Current

I_FM

Average Rectified Forward Current

I_F(AV)

200

Power Dissipation

P_tot

T_j

500

Junction Temperature

200

Operating and Storage Temperature Range

T_stg

- 65 to + 175

Characteristics at T_a= 25

Parameter

Symbol

R_θJA

Max.

350

Unit

Thermal Resistance Junction to Ambient ¹⁾

¹⁾Valid provided that leads are at a distance of 8 mm from case kept at ambient temperature.

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Max.

1.2

Unit

Forward Voltage

at I_F= 200 mA

Reverse Current

at V_R= 50 V

I_R

100

Reverse Recovery Time

at I_F= I_R= 200 mA, I_rr= 0.1 X I_R, R_L= 100 Ω

t_rr

1/ 2

Dated : 04/05/2023 Rev:01

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与1N4150PF相关器件

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1N4150-T	RECTRON	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,
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1N4150T-10	ROHM	获取价格	Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,
1N4150T-10A	ROHM	获取价格	Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,
1N4150T11A	ROHM	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,
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1N4150T-12	ROHM	获取价格	Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,