Datasheet > 1N4150_12

1N4150_12

更新时间： 2024-11-14 07:21:15

品牌	Logo	应用领域
威世 - VISHAY		二极管开关
页数	文件大小	规格书
3页	101K
描述
Small Signal Fast Switching Diodes

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中文翻译

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数据手册

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1N4150_12 数据手册

1N4150

Vishay Semiconductors

Small Signal Fast Switching Diodes

Features

• Silicon Epitaxial Planar Diode

• Low forward voltage drop

• AEC-Q101 qualified

• High forward current capability

• Compliant to RoHS directive 2002/95/EC

and in accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21

definition

94 9367

Applications

• High speed switch and general purpose use in

computer and industrial applications

Mechanical Data

Case: DO-35

Packaging codes/options:

TR/10 k per 13" reel (52 mm tape), 50 k/box

TAP/10 k per Ammopack (52 mm tape), 50 k/box

Weight: approx. 125 mg

Cathode band color: black

Parts Table

Part

Ordering code

Type Marking

1N4150

Remarks

1N4150

1N4150-TR or 1N4150-TAP

Tape and Reel/Ammopack

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Value

Unit

V_RRM

V_R

Repetitive peak reverse voltage

Reverse voltage

t_p= 1 µs

I_FSM

I_FRM

I_F

Peak forward surge current

Average peak forward current

Forward continuous current

Average forward current

600

300

150

440

500

_R= 0

I_FAV

P_tot

l = 4 mm, T_L= 45 °C

Power dissipation

l = 4 mm, T_L≤ 25 °C

Thermal Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Value

350

Unit

K/W

°C

l = 4 mm, T_L= constant

R_thJA

T_j

Thermal resistance junction to ambient air

Junction temperature

175

T_stg

Storage temperature range

- 65 to + 175

°C

Document Number 85522

Rev. 1.8, 20-Aug-10

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

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