5秒后页面跳转
1N4150-1JANTX PDF预览

1N4150-1JANTX

更新时间: 2024-11-14 12:29:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管开关
页数 文件大小 规格书
2页 50K
描述
SWITCHING DIODES

1N4150-1JANTX 数据手册

 浏览型号1N4150-1JANTX的Datasheet PDF文件第2页 
• 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231  
• 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231  
1N4150  
and  
1N4150-1  
and  
• SWITCHING DIODES  
• HERMETICALLY SEALED  
• METALLURGICALLY BONDED  
• DOUBLE PLUG CONSTRUCTION  
1N3600  
MAXIMUM RATINGS  
Junction Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
Operating Current: 300 mA @ T = +25°C  
A
Derating: 2.0 mA dc/°C Above T = + 75°C @ L = 3/8”  
L
Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed.  
Type  
V
V
I
1
C
t
BR  
RWM  
R1  
R2  
rr  
I = I = 10 to 100 mA dc  
F
V
= 50 V dc  
= 25°C  
V
= 50 V dc  
= 150°C  
V
= 0; f = 1 Mhz;  
R
T
R
R
R
I
= 10 µA  
V dc  
T
acsignals = 50 mV (p-p)  
pF  
R
L
= 100 ohms  
ns  
R
A
A
V (pk)  
µA dc  
µA dc  
FIGURE 1  
1N3600  
1N4150,-1  
75  
75  
50  
50  
0.1  
0.1  
100  
100  
2.5  
2.5  
4
4
FORWARD VOLTAGE LIMITS – ALL TYPES  
DESIGN DATA  
V
V
V
V
V
F1  
F2  
F3  
F4  
F5  
CASE: Hermetically sealed  
glass case per MIL-S-19500/231  
D0-35 outline.  
Limits  
I
= 1 mA dc  
I
= 10 mA dc  
I
= 50 mA dc  
(Pulsed)  
I
= 100 mA dc  
(Pulsed)  
I
= 200 mA dc  
F
(Pulsed)  
F
F
F
F
V dc  
V dc  
V dc  
V dc  
V dc  
LEAD MATERIAL: Copper clad steel.  
LEAD FINISH: Tin / Lead  
minimum  
maximum  
0.540  
0.620  
0.660  
0.740  
0.760  
0.860  
0.820  
0.920  
0.870  
1.000  
THERMAL RESISTANCE: (R  
):  
OJL  
250 °C/W maximum at L = .375  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 70  
JX  
O
POLARITY: Cathode end is banded.  
MOUNTING POSITION: Any.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (781) 689-0803  
WEBSITE: http://www.microsemi.com  
37  

与1N4150-1JANTX相关器件

型号 品牌 获取价格 描述 数据表
1N41501N457A MICROSEMI

获取价格

Silicon Switching Diode DO-35 Glass Package
1N4150-1R MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon,
1N4150-1X MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon,
1N4150-A DIODES

获取价格

Rectifier Diode, 1 Element, 50V V(RRM), Silicon
1N4150BK CENTRAL

获取价格

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,
1N4150D7/10K VISHAY

获取价格

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM),
1N4150FV ROHM

获取价格

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,
1N4150-G SENSITRON

获取价格

Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, DO-35, GREEN, GLASS PACKAGE-2
1N4150HF ROHM

获取价格

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,
1N4150HJ ROHM

获取价格

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35,