Datasheet > 1N41501N457A

1N41501N457A

更新时间： 2024-11-13 22:37:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管开关
页数	文件大小	规格书
1页	76K
描述
Silicon Switching Diode DO-35 Glass Package

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1N41501N457A 数据手册

Silicon Switching Diode

DO-35 Glass Package

1N4150

1N457A

Applications

Used in general purpose applications,where a controlled forward

characteristic is important.

DO -35 Glass Package

Features

Lead Dia.

0.018-0.022"

0.458-0.558 mm

Six sigma quality

BKC's Sigma Bond™ plating

for problem free solderability

LL-35 MELF SMD available

Hermetic Glass Package

Extremely low FIT Level

Dia.

0.06-0.09"

1.0"

25.4 mm

(M in.)

Length

0.120-.200"

3.05-5.08- mm

1.53-2.28 mm

Maximum Ratings

Symbol

PIV

Iavg

I_Fdc

Value

Unit

Volts

Peak Inverse Voltage

70 (Min).

200

Average Rectified Current

Continuous Forward Current

Peak Surge Current (t_peak= 1 sec.)

mAmps

Amp

300

I_peak

1.0

Max. Power Dissipation T_L=50 ^oC, L = 3/8" from body

P_tot

500

mWatts

^oC

Operating Temperature Range

T_Op

-80 to +200

Storage Temperature Range

T_St

Electrical Characteristics @ 25^oC*

Forward Voltage Drop @ I_F= 100 mA

Reverse Leakage @ V_R= 60 V

Symbol

Minimum

Maximum

1.00

Unit

Volts

V_F

I_R

***

Reverse Leakage @ V_R= 60 V,100 ^oC

I_R

0.005

6 Lake Street - Lawrence, MA 01841

Tel: 978-681-0392 - Fax: 978-681-9135

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