Datasheet > 1N4150_12

1N4150_12

更新时间： 2024-11-14 12:51:31

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	536K
描述
500mW 75 Volt Silicon Epitaxial Diode

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中文翻译

获取价格

数据手册

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1N4150_12 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

1N4150

Features

•

Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates

Compliant. See ordering information)

Low Current Leakage

Compression Bond Construction

Low Cost

Marking : Cathode band and type number

•

500mW 75 Volt Silicon

Epitaxial Diode

Moisture Sensitivity Level 1

DO-35

Maximum Ratings

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 300°C/W Junction To Ambient

Electrical Characteristics @ 25°C Unless Otherwise Specified

Reverse Voltage

V_R

50V

I_R=5.0μA

Breakdown Voltage

B_V

75V

Average Rectified

Current

I_O

200mA

500mW

Cathode

Mark

Power Dissipation

P_TOT

I_FSM

Peak Forward Surge

Current

1.0A

4.0A

Pulse Width=1.0S

Pulse Width=1.0µS

Maximum

Instantaneous

Forward Voltage

I_FM= 100mA;

T_J= 25°C*

V_F

1.0V

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_R=50Volts

T_J= 25°C

T_J= 150°C

100nA

100µA

I_R

DIMENSIONS

INCHES

MIN

---

MIN

---

25.40

Maximum Junction

Capacitance

Measured at 1.0MHz,

V_R=0

C_J

T_rr

2.5pF

4.0nS

DIM

MAX

.166

.079

.020

---

MAX

4.2

2.00

.52

NOTE

I_F=10mA

V_R=6.0V

R_L=100Ω

1.000

---

Maximum Reverse

Recovery Time

Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.

www.mccsemi.com

Revision: C

2012/12/04

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