M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
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TM
Micro Commercial Components
1N4150
Features
•
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Low Current Leakage
Compression Bond Construction
Low Cost
Marking : Cathode band and type number
•
•
•
·
500mW 75 Volt Silicon
Epitaxial Diode
·
Moisture Sensitivity Level 1
DO-35
Maximum Ratings
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 300°C/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
D
Reverse Voltage
VR
50V
IR=5.0μA
Breakdown Voltage
BV
75V
Average Rectified
Current
A
IO
200mA
500mW
Cathode
Mark
Power Dissipation
PTOT
IFSM
B
Peak Forward Surge
Current
1.0A
4.0A
Pulse Width=1.0S
Pulse Width=1.0µS
D
Maximum
Instantaneous
Forward Voltage
IFM = 100mA;
TJ = 25°C*
VF
1.0V
C
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
VR=50Volts
TJ = 25°C
TJ = 150°C
100nA
100µA
IR
DIMENSIONS
INCHES
MIN
---
---
---
MM
MIN
---
---
---
25.40
Maximum Junction
Capacitance
Measured at 1.0MHz,
VR=0
CJ
Trr
2.5pF
4.0nS
DIM
A
B
C
D
MAX
.166
.079
.020
---
MAX
4.2
2.00
.52
NOTE
IF=10mA
VR=6.0V
RL=100Ω
1.000
---
Maximum Reverse
Recovery Time
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.
www.mccsemi.com
Revision: C
2012/12/04
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