Datasheet > 1N4150

1N4150

更新时间： 2024-11-14 22:37:31

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TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES

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1N4150 数据手册

1N914

THRU

DC COMPONENTS CO., LTD.

RECTIFIER SPECIALISTS

4148 4454

TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES

VOLTAGE RANGE -50 to 100 Volts

CURRENT - 0.075 to 0.2 Ampere

FEATURES

* Silicon epitaxial planar diodes

* Low power loss, high efficiency

* Low leakage

* Low forward voltage

* High speed switching

* High current capability

* High reliability

DO-34 / DO-35

MECHANICAL DATA

* Case: Glass sealed case

0.52Ø

* Lead: MIL-STD-202E, Method 208 guaranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

25.0MIN

* Weight: 0.13 gram

2.0MAX

25.0MIN

DO-34 DO-35

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

2.9

MAX

4.2

MAX

Dimensions in millimeters

SYMBOL

1N914 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454 UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum Average Rectified Current

Maximum Power Dissipation Tamb=25^oC

Maximum Forward Voltage

VRRM

100

150

500

100

150

500

V/mA

nA/V

200

500

150

500

150

500

150

500

Ptot

250

1.0/10 1.0/10 1.0/200 1.0/50 1.0/30 1.0/100 1.0/10

5000/75 5000/75 100/50 50/50 100/25 5000/75 100/10

Maximum Reverse Current

Maximum Reverse Recovery Time

Typical Junction Capacitance

trr

4.0

2.0

4.0

2.0

4.0

Operating and Storage Temperature Range

TJ,TSTG

-65 to + 200

^oC

NOTE: 1-1N914A, 1N914B IS SAME AS 1N914, EXCEPT DIFFERENT IN FORWARD VOLTAGE:

1N914A-1.0/20 V/mA

1N914B-1.0/100 V/mA

2.Suffix "M" stands for "DO-34" package.(e.g.:1N4148M)

EXIT

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1N4150/F3	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
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