Datasheet > 1N4150

1N4150

更新时间： 2024-11-14 22:37:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管开关
页数	文件大小	规格书
1页	76K
描述
Silicon Switching Diode DO-35 Glass Package

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

1N4150 数据手册

1N4150

Silicon Switching Diode

DO-35 Glass Package

1NNor1

1N4150-1

Applications

Used in general purpose applications,where a controlled forward

characteristic and fast switching speed are important.

DO-35 Glass Package

Features

Lead Dia.

0.018-0.022"

0.458-0.558 mm

Sixsigmaquality

Metallurgicallybonded

BKC'sSigmaBond™plating

for problem free solderability

LL-34/35 MELF SMD available

Full approval to Mil-S-19500/231

Available up to JANTXV-1 levels

Dia.

0.06-0.09"

1.0"

25.4 mm

(Min.)

Length

0.120-.200"

3.05-5.08- mm

1.53-2.28 mm

"S" level screening available to Source Control Drawings

Maximum Ratings

Symbo l

PIV

Value

75 (Min.)

200

Unit

Peak Inverse Voltage

Volts

AverageRectifiedCurrent

I_Avg

mAmps

Amp

Continuous Forward Current

Peak Surge Current (t_peak= 1 sec.)

BKC Power Dissipation T_L=50 ^oC, L = 3/8" from body

Operating Temperature Range

I_Fdc

400

I_peak

0.5

P_tot

500

mWatts

^oC

T_Op

-65 to +200

Storage Temperature Range

T_St

-65 to +200

^oC

Electrical Characteristics @ 25 ^oC

Forward Voltage Drop @ I_F= 1.0 mA

Forward Voltage Drop @ I_F= 10 mA

Forward Voltage Drop @ I_F= 50 mA

Symbol

V _F

Minimum

Maximum

0.62

Unit

0.54

0.66

0.76

Volts

V _F

0.74

Volts

V _F

0.86

Forward Voltage Drop @ I_F= 100 m

Forward Voltage Drop @ I_F= 200 mA

0.80

0.87

0.92

1.0

Volts

V _F

I_r

Reverse Leakage Current @ V = 50 V

0.1 (100 @ 150 C) µA

Volts

p F

Breakdown Voltage @ Ir = 0.1 mA

PIV

C _T

t_rr

Capacitance @ V = 0 V, f = 1mHz

2.5

4.0

6.0

1 0

Reverse Recovery time (note 1)

Reverse Recovery time (note 2,3)

Forward Recovery time (note 4)

nS ecs

t_rr

V _fr

Note 1: Per Method 4031-A with I_F= I_R= 10 to 200 mA, R_L= 100 Ohms,recover to 0.1 If.

Note 2: Per Method 4031-A with I_F= I_R= 200 to 400 mA, R_L= 100 Ohms,recover to 0.1 If.

Note 3: Per Method 4031-A with I_F= 10 microA, Ir = 1.0 mA, recover to 0.1 mA.

Note 4: Per Method 4026 with I_F= 200 mA, Ir = 1.0 mA, recover to 0.1 mA.

6 Lake Street - Lawrence, MA 01841

Tel: 978-681-0392 - Fax: 978-681-9135

中文翻译

下载PDF

1N4150 替代型号

型号	品牌	替代类型	描述	数据表
JANTX1N4150	MICROSEMI	功能相似	Silicon Switching Diode DO-35 Glass Package
1N4150	DIOTEC	功能相似	Silicon Planar Diodes

与1N4150相关器件

型号	品牌	获取价格	描述	数据表
1N4150.TR	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,
1N4150/D7	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
1N4150/F3	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
1N4150_07	VISHAY	获取价格	Small Signal Fast Switching Diodes
1N4150_12	VISHAY	获取价格	Small Signal Fast Switching Diodes
1N4150_12	MCC	获取价格	500mW 75 Volt Silicon Epitaxial Diode
1N4150_14	PANJIT	获取价格	FAST SWITCHING SURFACE MOUNT DIODES
1N4150_15	WINNERJOIN	获取价格	High-speed switching diode
1N4150_15	GOOD-ARK	获取价格	Small-Signal Diode Fast Switching Diode
1N4150_AX_10001	PANJIT	获取价格	FAST SWITCHING SURFACE MOUNT DIODES

与1N4150相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

6
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

3
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

1N4150

1N4150 数据手册

1N4150 替代型号

与1N4150相关器件

与1N4150相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N4150

1N4150 数据手册

1N4150 替代型号

与1N4150相关器件

与1N4150相关文章

您还可以找

您在本页遇到什么问题？