Datasheet > 1N4150

1N4150

更新时间： 2024-11-14 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		信号二极管
页数	文件大小	规格书
2页	332K
描述
1N4150 SIGNAL DIODE

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1N4150 数据手册

1N4150

WILLAS

1N4150 SIGNAL DIODE

Pb Free Product

Dimensions (DO-35)

Absolute Maximum Ratings (Ta=25°C)

Items

Symbol

Ratings

Unit

.022(0.55)

.018(0.45)

Reverse Voltage

Reverse Recovery

Time

trr

1.02(26.0)

MIN.

Power Dissipation

3.33mW/°C (25°C)

Forward Current

Junction Temp.

Storage Temp.

500

Tstg

200

-65 to 200

°C

.153(3.6)

.132(3.0)

.087(2.2)

.067(1.7)

Mechanical Data

Items

Package

Case

Lead/Finish

Chip

Materials

DO-35

Hermetically sealed glass

Double stud/Solder Plating

Glass Passivated

1.02(26.0)

MIN.

Dimensions in millimeters

Electrical Characteristics (Ta=25°C)

Ratings

Breakdown Voltage

IR= 5.0uA

Symbol

Ratings

Unit

Peak Forward Surge Current PW= 1sec.

Maximum Forward Voltage

IF= 200mA

IFsurge

1.0

Maximum Reverse Current

VR= 50V

VR= 20V, Tj= 150°C

Maximum Junction Capacitance

VR= 0, f= 1 MHz

0.10

100

trr

2.5

Max Reverse Recovery Time

IF= -IR= 10-200mA, to 0.1 IF

WILLAS ELECTRONIC CORP.

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