Datasheet > 1N4150

1N4150

更新时间： 2024-11-14 07:21:15

品牌	Logo	应用领域
SYNSEMI		二极管开关
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2页	24K
描述
HIGH SPEED SWITCHING DIODE

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数据手册

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1N4150 数据手册

HIGH SPEED SWITCHING DIODE

1N4150

DO - 35 Glass

(DO-204AH)

FEATURES :

• High switching speed: max. 4 ns

• Continuous reverse voltage:max. 50 V

• Repetitive peak reverse voltage:max. 75 V

• Repetitive peak forward current: max. 600 mA

• Pb / RoHS Free

1.00 (25.4)

0.079(2.0 )max.

min.

0.150 (3.8)

Cathode

max.

Mark

1.00 (25.4)

0.020 (0.52)max.

min.

MECHANICAL DATA :

Case: DO-35 Glass Case

Weight: approx. 0.13g

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

V_RRM

V_RM

I_F

Value

Unit

Maximum Repetitive Peak Reverse Voltage

Maximum Continuous Reverse Voltage

Maximum Continuous Forward Current

Maximum Power Dissipation

200

P_D

500

I_FRM

I_FSM

T_J

Maximum Repetitive Peak Forward Current

Maximum Surge Forward Current at t = 1s , Tj = 25°C

Maximum Junction Temperature

600

0.5

200

°C

T_S

Storage Temperature Range

-65 to + 200

°C

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

Min.

Typ.

Max.

0.1

Unit

Parameter

Symbol

I_R

V_R= 50 V

Reverse Current

V_R= 50 V , Tj = 150 °C

I_F= 100 mA

100

0.92

1.0

V_F

Forward Voltage

I_F= 200 mA

f = 1MHz ; V_R= 0

I_F= 10 mA to 200 mA

to I_R= 10 mA to 200 mA;

R_L= 100 W ; measured

at I_R= 0.1x I_F

Diode Capacitance

2.5

Reverse Recovery Time

Trr

Page 1 of 2

Rev. 02 : March 25, 2005

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