生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XUFM-X4 |
Reach Compliance Code: | unknown | 风险等级: | 5.83 |
最大集电极电流 (IC): | 400 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE WITH BUILT-IN DIODE AND CURRENT LIMITING CIRCUIT | JESD-30 代码: | R-XUFM-X4 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 1400 ns |
标称接通时间 (ton): | 1000 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1MBI400NM-120 | ETC |
获取价格 |
||
1MBI400NN-120 | FUJI |
获取价格 |
IGBT MODULE ( N series ) | |
1MBI400NP-120 | FUJI |
获取价格 |
IGBT MODULE ( N series ) | |
1MBI400S-120 | FUJI |
获取价格 |
1200V / 400A 1 in one-package IGBT Module | |
1MBI400SA120 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 600A I(C) | |
1MBI400SA-120 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel | |
1MBI400SC-120 | FUJI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
1MBI400U-120 | FCI-CONNECTOR |
获取价格 |
IGBT Module | |
1MBI400U4-120 | FUJI |
获取价格 |
IGBT MODULE | |
1MBI400V-120-50 | FUJI |
获取价格 |
IGBT MODULE (V series) 1200V / 400A / 1 in one package |