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1MBI400NP-120 PDF预览

1MBI400NP-120

更新时间: 2024-11-16 22:07:59
品牌 Logo 应用领域
富士电机 - FUJI 晶体晶体管双极性晶体管局域网
页数 文件大小 规格书
4页 120K
描述
IGBT MODULE ( N series )

1MBI400NP-120 技术参数

生命周期:Obsolete零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X4针数:4
Reach Compliance Code:unknown风险等级:5.83
Is Samacsys:N最大集电极电流 (IC):400 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
JESD-30 代码:R-XUFM-X4元件数量:1
端子数量:4封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER晶体管元件材料:SILICON
标称断开时间 (toff):1500 ns标称接通时间 (ton):1200 ns
Base Number Matches:1

1MBI400NP-120 数据手册

 浏览型号1MBI400NP-120的Datasheet PDF文件第2页浏览型号1MBI400NP-120的Datasheet PDF文件第3页浏览型号1MBI400NP-120的Datasheet PDF文件第4页 
IGBT MODULE ( N series )  
n Outline Drawing  
n Features  
Square RBSOA  
Low Saturation Voltage  
Less Total Power Dissipation  
Improved FWD Characteristic  
Minimized Internal Stray Inductance  
Overcurrent Limiting Function (4~5 Times Rated Current)  
n Applications  
High Power Switching  
A.C. Motor Controls  
D.C. Motor Controls  
Uninterruptible Power Supply  
n Maximum Ratings and Characteristics  
n Equivalent Circuit  
Absolute Maximum Ratings ( Tc=25°C)  
Items  
Collector-Emitter Voltage  
Gate -Emitter Voltage  
Symbols  
Ratings  
1200  
± 20  
Units  
V
V
VCES  
VGES  
Continuous  
1ms  
Continuous  
1ms  
IC  
400  
800  
400  
800  
Collector  
Current  
IC PULSE  
-IC  
-IC PULSE  
A
Max. Power Dissipation  
Operating Temperature  
Storage Temperature  
Isolation Voltage  
PC  
Tj  
Tstg  
Vis  
Mounting *1  
Terminals *2  
Terminals *3  
3100  
+150  
-40 ~ +125  
2500  
3.5  
W
°C  
°C  
V
A.C. 1min.  
Screw Torque  
4.5  
1.7  
Nm  
Note: *1:Recommendable Value; 2.5 ~ 3.5 Nm (M5) or (M6)  
*2:Recommendable Value; 3.5 ~ 4.5 Nm (M6)  
*3:Recommendable Value; 1.3 ~ 1.7 Nm (M4)  
Electrical Characteristics ( at Tj=25°C )  
Items  
Zero Gate Voltage Collector Current  
Gate-Emitter Leackage Current  
Gate-Emitter Threshold Voltage  
Collector-Emitter Saturation Voltage  
Input capacitance  
Symbols  
ICES  
IGES  
VGE(th)  
VCE(sat)  
Cies  
Coes  
Cres  
tON  
tr  
tOFF  
tf  
VF  
trr  
Test Conditions  
VGE=0V VCE=1200V  
VCE=0V VGE=± 20V  
VGE=20V IC=400mA  
VGE=15V IC=400A  
VGE=0V  
VCE=10V  
f=1MHz  
VCC=600V  
IC=400A  
Min.  
Typ.  
Max.  
4.0  
60  
7.5  
3.3  
Units  
mA  
µA  
V
4.5  
V
64000  
23200  
20640  
0.75  
0.25  
1.05  
Output capacitance  
Reverse Transfer capacitance  
pF  
1.2  
0.6  
1.5  
0.5  
3.0  
350  
Turn-on Time  
Turn-off Time  
µs  
VGE=± 15V  
RG=1.8W  
IF=400A VGE=0V  
IF=400A  
0.35  
Diode Forward On-Voltage  
Reverse Recovery Time  
V
ns  
Thermal Characteristics  
Items  
Symbols  
Rth(j-c)  
Rth(j-c)  
Test Conditions  
Min.  
Typ.  
Max.  
0.04  
0.12  
Units  
IGBT  
Thermal Resistance  
Diode  
°C/W  
Rth(c-f)  
With Thermal Compound  
0.0125  

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