Datasheet > 1MBI400U-120

1MBI400U-120

更新时间： 2024-11-17 02:54:47

品牌	Logo	应用领域
FCI-CONNECTOR		晶体晶体管功率控制双极性晶体管局域网
页数	文件大小	规格书
4页	114K
描述
IGBT Module

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中文翻译

获取价格

数据手册

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1MBI400U-120 数据手册

1MBI400U-120

1200V / 400A 1 in one-package

IGBT Module U-Series

Equivalent Circuit Schematic

Features

Applications

· High speed switching

· Inverter for Motor drive

· Voltage drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Low inductance module structure

· Industrial machines, such as Welding machines

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Unit

Rating

1200

Item

Symbol

VCES

VGES

Conditions

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

±20

600

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

Continuous

1ms

400

1200

800

ICp

400

-IC

800

-IC pulse

1ms

°C

2155

+150

-40 to +125

2500

3.5

Collector Power Dissipation

1 device

Junction temperature

Storage temperature

Tstg

VAC

N·m

Isolation voltage between terminal and copper base *1

Viso

AC:1min.

Screw Torque

Mounting *2

Terminals *2

4.5

1.7

*1 : All terminals should be connected together when isolation test will be done.

*2 : Recommendable value : Mounting 2.5 to 3.5N·m(M5 or M6), Terminal 3.5 to 4.5 N·m(M6), 1.3 to 1.7 N·m(M4)

Electrical characteristics (at Tj=25°C unless otherwise specified)

Item

Symbols Conditions

Characteristics

Min. Typ.

Unit

Max.

4.0

800

8.5

Zero gate voltage collector current

Gate-Emitter leakage current

VGE=0V, VCE=1200V

ICES

–

4.5

–

VCE=0V, VGE=±20V

VCE=20V, IC=400mA

VGE=15V, IC=400A

IGES

–

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

VGE(th)

VCE(sat)

(terminal)

VCE(sat)

(chip)

Cies

6.5

1.95

2.20

1.75

2.00

2.30

–

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

2.10

–

Input capacitance

Turn-on time

VCE=10V, VGE=0V, f=1MHz

µs

–

VCC=600V

ton

0.36

0.21

0.03

0.37

0.07

1.80

1.90

1.60

1.70

–

1.20

0.60

–

IC=400A

VGE=±15V

tr(i)

Turn-off time

RG=1.5 Ω

toff

1.00

0.30

2.10

–

Forward on voltage

VGE=0V

IF=400A

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

(terminal)

1.90

–

(chip)

trr

Reverse recovery time

IF=400A

µs

0.35

–

Lead resistance, terminal-chip*3

mΩ

R lead

0.40

*3:Biggest internal terminal resistance among arm.

Thermal resistance characteristics

Items

Symbols

Conditions

Characteristics

Min. Typ.

Unit

Max.

–

0.058

0.100

–

IGBT

FWD

Thermal resistance

Rth(j-c)

°C/W

–

Rth(j-c)

°C/W

0.0125

With thermal compound

Contact Thermal resistance

Rth(c-f)*4

*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.

12 3 4

中文翻译

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与1MBI400U-120相关器件

型号	品牌	获取价格	描述	数据表
1MBI400U4-120	FUJI	获取价格	IGBT MODULE
1MBI400V-120-50	FUJI	获取价格	IGBT MODULE (V series) 1200V / 400A / 1 in one package
1MBI400V-170-50	FUJI	获取价格	1-Pack(1 in 1)
1MBI400VF-120-50	FUJI	获取价格	1-Pack(1 in 1) M153
1MBI400VH-060L-50	FUJI	获取价格	1-Pack(1 in 1) M283
1MBI50FE060	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 600V V(BR)CES \| 50A I(C)
1MBI50FE120	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 1.2KV V(BR)CES \| 50A I(C)
1MBI50L-060	FUJI	获取价格	IGBT MODULE (L series)
1MBI50U4F-120L-50	FUJI	获取价格	IGBT MODULE (U series) 1200V / 50A / 1 in one package
1MBI600LN-060	FUJI	获取价格	IGBT MODULE

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