Datasheet > 1MBI50U4F-120L-50

1MBI50U4F-120L-50

更新时间： 2024-11-17 12:50:39

品牌	Logo	应用领域
富士电机 - FUJI		双极性晶体管
页数	文件大小	规格书
7页	452K
描述
IGBT MODULE (U series) 1200V / 50A / 1 in one package

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数据手册

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1MBI50U4F-120L-50 数据手册

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http://www.fujielectric.com/products/semiconductor/

1MBI50U4F-120L-50

IGBT MODULE (U series)

IGBT Modules

1200V / 50A / 1 in one package

Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

Inverter DB for Motor Drive

AC and DC Servo Drive Ampliﬁer (DB)

Active PFC

Industrial machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise speciﬁed)

Items

Symbols

Conditions

Maximum ratings

Units

Collector-Emitter voltage

Gate-Emitter voltage

CES

1200

±20

GES

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

150

100

Continuous

1ms

Collector current

Ic pulse

-Ic

-Ic pulse

1ms

1 device

275

1200

150

+150

-40~+125

2500

Collector power dissipation

Reverse voltage for FWD

Continuous

1ms

Forword current for FWD

IF pulse

Tstg

Junction temperature

Storage temperature

°C

VAC

Isolation voltage Between terminal and copper base (*1) V^iso

AC : 1min.

Mounting (*2)

Terminals (*3)

Screw torque

3.5

Note *1: All terminals should be connected together when isolation test will be done.

Note *2: Recommendable Value : 2.5 to 3.5 Nm (M5 or M6)

Note *3: Recommendable Value : 2.5 to 3.5 Nm (M5)

12 3 4 5 6 7

中文翻译

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