Datasheet > 1MBI400NA-120

1MBI400NA-120

更新时间： 2024-11-16 22:07:59

品牌	Logo	应用领域
富士电机 - FUJI		双极性晶体管
页数	文件大小	规格书
4页	157K
描述
IGBT MODULE(N series)

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中文翻译

获取价格

数据手册

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1MBI400NA-120 数据手册

IGBT MODULE ( N series )

n Outline Drawing

n Features

• Square RBSOA

• Low Saturation Voltage

• Less Total Power Dissipation

• Improved FWD Characteristic

• Minimized Internal Stray Inductance

• Overcurrent Limiting Function (4~5 Times Rated Current)

n Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

n Equivalent Circuit

n Maximum Ratings and Characteristics

• Absolute Maximum Ratings ( T_c=25°C)

Items

Symbols

Ratings

1200

± 20

Units

Collector-Emitter Voltage

Gate -Emitter Voltage

V_CES

V_GES

Continuous

1ms

Continuous

1ms

I_C

400

800

400

800

Collector

Current

I_{C PULSE}

-I_C

-I_{C PULSE}

Max. Power Dissipation

Operating Temperature

Storage Temperature

Isolation Voltage

P_C

T_j

T_stg

V_is

3100

+150

-40 ~ +125

2500

3.5

°C

A.C. 1min.

Mounting *1

Terminals *2

Terminals *3

Note: *1:Recommendable Value; 2.5 ~ 3.5 Nm (M5) or (M6)

*2:Recommendable Value; 3.5 ~ 4.5 Nm (M6)

Screw Torque

4.5

1.7

*3:Recommendable Value; 1.3 ~ 1.7 Nm (M4)

• Electrical Characteristics ( at T_j=25°C )

Items

Symbols

I_CES

I_GES

V_GE(th)

V_CE(sat)

C_ies

C_oes

C_res

t_ON

t_r

t_OFF

t_f

V_F

t_rr

Test Conditions

V_GE=0V V_CE=1200V

V_CE=0V V_GE=± 20V

V_GE=20V I_C=400mA

V_GE=15V I_C=400A

V_GE=0V

V_CE=10V

f=1MHz

V_CC=600V

I_C=400A

Min.

Typ.

Max.

4.0

7.5

3.3

Units

µA

Zero Gate Voltage Collector Current

Gate-Emitter Leackage Current

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Input capacitance

4.5

64000

23200

20640

0.75

0.25

1.05

Output capacitance

Reverse Transfer capacitance

1.2

0.6

1.5

0.5

3.0

350

Turn-on Time

Turn-off Time

µs

V_GE=± 15V

R_G=1.8W

I_F=400A V_GE=0V

I_F=400A

0.35

Diode Forward On-Voltage

Reverse Recovery Time

• Thermal Characteristics

Items

Symbols

R_th(j-c)

Test Conditions

Min.

Typ.

Max.

0.04

0.12

Units

IGBT

Thermal Resistance

Diode

°C/W

R_th(c-f)

With Thermal Compound

0.0125

12 3 4

中文翻译

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