5秒后页面跳转
ZXTN2010GTA PDF预览

ZXTN2010GTA

更新时间: 2024-09-13 07:42:23
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率双极晶体管开关光电二极管
页数 文件大小 规格书
6页 134K
描述
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZXTN2010GTA 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-261AA
包装说明:SOT-223, 4 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:15 weeks风险等级:0.96
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):6 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-261AAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzBase Number Matches:1

ZXTN2010GTA 数据手册

 浏览型号ZXTN2010GTA的Datasheet PDF文件第2页浏览型号ZXTN2010GTA的Datasheet PDF文件第3页浏览型号ZXTN2010GTA的Datasheet PDF文件第4页浏览型号ZXTN2010GTA的Datasheet PDF文件第5页浏览型号ZXTN2010GTA的Datasheet PDF文件第6页 
ZXTN2010G  
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223  
SUMMARY  
BV  
= 60V : R  
= 35m ; I = 6A  
CEO  
SAT C  
DESCRIPTION  
Packaged in the SOT223 outline this new low saturation 60V NPN transistor  
offers extremely low on state losses making it ideal for use in DC-DC circuits  
and various driving and power management functions.  
FEATURES  
SOT223  
Extremely low equivalent on-resistance; RSAT = 35mV at 6A  
6 amps continuous current  
Up to 20 amps peak current  
Very low saturation voltages  
Excellent hFE characteristics up to 10 amps  
APPLICATIONS  
Emergency lighting circuits  
Motor driving (including DC fans)  
Solenoid, relay and actuator drivers  
DC Modules  
Backlight Inverters  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZXTN2010GTA  
ZXTN2010GTC  
7”  
12mm  
1000 units  
4000 units  
embossed  
13”  
TOP VIEW  
DEVICE MARKING  
ZXTN  
2010  
ISSUE 2 - MAY 2006  
1
SEMICONDUCTORS  

ZXTN2010GTA 替代型号

型号 品牌 替代类型 描述 数据表
FZT851TA DIODES

类似代替

60V NPN MEDIUM POWER TRANSISTOR IN SOT223
ZX5T851GTA DIODES

类似代替

60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
DZT851-13 DIODES

类似代替

NPN SURFACE MOUNT TRANSISTOR

与ZXTN2010GTA相关器件

型号 品牌 获取价格 描述 数据表
ZXTN2010GTC ZETEX

获取价格

60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
ZXTN2010GTC DIODES

获取价格

60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
ZXTN2010Z DIODES

获取价格

60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
ZXTN2010Z-13R DIODES

获取价格

Power Bipolar Transistor
ZXTN2010ZQ DIODES

获取价格

NPN, 60V, 5A, SOT89
ZXTN2010ZQTA DIODES

获取价格

Power Bipolar Transistor
ZXTN2010ZTA DIODES

获取价格

60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
ZXTN2011G DIODES

获取价格

100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION
ZXTN2011G ZETEX

获取价格

100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
ZXTN2011G_06 ZETEX

获取价格

100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223