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ZXTN2010ZQ PDF预览

ZXTN2010ZQ

更新时间: 2024-10-31 13:45:39
品牌 Logo 应用领域
美台 - DIODES 晶体管
页数 文件大小 规格书
6页 138K
描述
NPN, 60V, 5A, SOT89

ZXTN2010ZQ 数据手册

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ZXTN2010Z  
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89  
SUMMARY  
BVCEO = 60V : RSAT = 30m ; IC = 5A  
DESCRIPTION  
Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers  
extremely low on state losses making it ideal for use in DC-DC circuits and various  
driving and power management functions.  
FEATURES  
Extremely low equivalent on-resistance; RSAT = 30mV at 6A  
5 amps continuous current  
SOT89  
Up to 20 amps peak current  
Very low saturation voltages  
Excellent hFE characteristics up to 10 amps  
APPLICATIONS  
Emergency lighting circuits  
Motor driving (including DC fans)  
Solenoid, relay and actuator drivers  
DC-DC modules  
Backlight inverters  
Power switches  
PINOUT  
MOSFET gate drivers  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZXTN2010ZTA  
7”  
12mm  
embossed  
1,000 units  
DEVICE MARKING  
851  
TOP VIEW  
ISSUE 2 - MAY 2006  
1
SEMICONDUCTORS  

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