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ZXTN2010ZTA PDF预览

ZXTN2010ZTA

更新时间: 2024-09-13 07:42:23
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
6页 138K
描述
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

ZXTN2010ZTA 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-89
包装说明:SOT-89, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:1.15外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):2.1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):130 MHz
Base Number Matches:1

ZXTN2010ZTA 数据手册

 浏览型号ZXTN2010ZTA的Datasheet PDF文件第2页浏览型号ZXTN2010ZTA的Datasheet PDF文件第3页浏览型号ZXTN2010ZTA的Datasheet PDF文件第4页浏览型号ZXTN2010ZTA的Datasheet PDF文件第5页浏览型号ZXTN2010ZTA的Datasheet PDF文件第6页 
ZXTN2010Z  
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89  
SUMMARY  
BVCEO = 60V : RSAT = 30m ; IC = 5A  
DESCRIPTION  
Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers  
extremely low on state losses making it ideal for use in DC-DC circuits and various  
driving and power management functions.  
FEATURES  
Extremely low equivalent on-resistance; RSAT = 30mV at 6A  
5 amps continuous current  
SOT89  
Up to 20 amps peak current  
Very low saturation voltages  
Excellent hFE characteristics up to 10 amps  
APPLICATIONS  
Emergency lighting circuits  
Motor driving (including DC fans)  
Solenoid, relay and actuator drivers  
DC-DC modules  
Backlight inverters  
Power switches  
PINOUT  
MOSFET gate drivers  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZXTN2010ZTA  
7”  
12mm  
embossed  
1,000 units  
DEVICE MARKING  
851  
TOP VIEW  
ISSUE 2 - MAY 2006  
1
SEMICONDUCTORS  

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