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ZXMP6A18DN8QTA PDF预览

ZXMP6A18DN8QTA

更新时间: 2024-11-19 13:02:55
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 181K
描述
Power Field-Effect Transistor, 3.7A I(D), 60V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

ZXMP6A18DN8QTA 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
风险等级:5.66其他特性:HIGH RELIABILITY
雪崩能效等级(Eas):38.2 mJ配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):3.7 A
最大漏源导通电阻:0.055 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):23 A参考标准:AEC-Q101
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXMP6A18DN8QTA 数据手册

 浏览型号ZXMP6A18DN8QTA的Datasheet PDF文件第2页浏览型号ZXMP6A18DN8QTA的Datasheet PDF文件第3页浏览型号ZXMP6A18DN8QTA的Datasheet PDF文件第4页浏览型号ZXMP6A18DN8QTA的Datasheet PDF文件第5页浏览型号ZXMP6A18DN8QTA的Datasheet PDF文件第6页浏览型号ZXMP6A18DN8QTA的Datasheet PDF文件第7页 
ZXMP6A18DN8  
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A  
DESCRIPTION  
This new generation of trench MOSFETs from Zetex utilizes a unique structure  
that com bines the benefits of low on-resistance with fast switching speed. This  
m akes them ideal for high efficiency, low voltage, power m anagem ent  
applications.  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
SO8  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
Motor drive  
Disconnect switches  
ORDERING INFORMATION  
DEVICE  
REEL TAPE  
QUANTITY  
PER REEL  
WIDTH  
12m m  
12m m  
ZXMP6A18DN8TA  
ZXMP6A18DN8TC  
7’‘  
500 units  
PINOUT  
13‘  
2500 units  
DEVICE MARKING  
ZXMP  
6A18  
Top view  
ISSUE 1 - MAY 2005  
1

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