是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | DPAK-3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.28 |
其他特性: | LOW THRESHOLD; FAST SWITCHING | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 70 V |
最大漏极电流 (ID): | 5.7 A | 最大漏源导通电阻: | 0.16 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 17.7 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMS6001 | ZETEX |
获取价格 |
60V N-channel self protected enhancement mode INTELLIFETTM MOSFET | |
ZXMS6001N3 | ZETEX |
获取价格 |
60V N-channel self protected enhancement mode INTELLIFETTM MOSFET | |
ZXMS6001N3 | DIODES |
获取价格 |
60V N-channel self protected enhancement mode | |
ZXMS6001N3Q | DIODES |
获取价格 |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET | |
ZXMS6001N3QTA | DIODES |
获取价格 |
暂无描述 | |
ZXMS6001N3TA | DIODES |
获取价格 |
60V N-channel self protected enhancement mode | |
ZXMS6001N3TA | ZETEX |
获取价格 |
60V N-channel self protected enhancement mode INTELLIFETTM MOSFET | |
ZXMS6002G | DIODES |
获取价格 |
60V N-Channel self protected enhancement mode | |
ZXMS6002G | ZETEX |
获取价格 |
60V N-Channel self protected enhancement mode | |
ZXMS6002GQTA | DIODES |
获取价格 |
Power Field-Effect Transistor, 1.4A I(D), 60V, 0.675ohm, 1-Element, N-Channel, Silicon, Me |