是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOT-223 |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | Factory Lead Time: | 17 weeks |
风险等级: | 0.8 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 0.8 A | 最大漏源导通电阻: | 1.8 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 6 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZVN4210GTC | DIODES |
获取价格 |
0.8A, 100V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | |
ZVN4210GTC | ZETEX |
获取价格 |
Power Field-Effect Transistor, 0.8A I(D), 100V, 1.8ohm, 1-Element, N-Channel, Silicon, Met | |
ZVN4306A | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
ZVN4306ASM | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
ZVN4306ASMTA | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
ZVN4306ASMTC | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
ZVN4306ASTOB | DIODES |
获取价格 |
1100mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | |
ZVN4306ASTZ | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
ZVN4306ASTZ | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal | |
ZVN4306AV | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |