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ZTX705SMTA PDF预览

ZTX705SMTA

更新时间: 2024-11-21 13:16:15
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美台 - DIODES 晶体小信号双极晶体管达林顿晶体管开关PC局域网
页数 文件大小 规格书
3页 81K
描述
Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX705SMTA 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:SMALL OUTLINE, R-PSSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.24
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:120 V配置:DARLINGTON
最小直流电流增益 (hFE):2000JESD-30 代码:R-PSSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):160 MHz
Base Number Matches:1

ZTX705SMTA 数据手册

 浏览型号ZTX705SMTA的Datasheet PDF文件第2页浏览型号ZTX705SMTA的Datasheet PDF文件第3页 
PNP SILICON PLANAR MEDIUM POWER  
DARLINGTON TRANSISTORS  
ISSUE 3 – MAY 94  
ZTX704  
ZTX705  
FEATURES  
*
*
*
*
120 Volt VCEO  
1 Amp continuous current  
Gain of 3K at IC=1 Amp  
Ptot=1 Watt  
APPLICATIONS  
Lamp, solenoid and relay drivers  
C
B
E
*
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX704  
-120  
ZTX705  
-140  
-120  
-10  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
-100  
Peak Pulse Current  
-4  
-1  
Continuous Collector Current  
IC  
Power Dissipation at Tamb = 25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated).  
PARAMETER  
SYMBOL  
ZTX704  
ZTX705  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
-120  
-140  
-120  
-10  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter  
Breakdown Voltage  
VCEO(SUS) -100  
V(BR)EBO -10  
ICBO  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
-0.1  
-10  
V
CB=-100V  
CB=-120V  
VCB=-100V, T  
µA  
µA  
µA  
µA  
-0.1  
V
=100°C  
amb  
=100°C  
-10  
-10  
VCB=-120V, T  
amb  
Collector Cut-Off  
Current  
ICES  
-10  
VCES=-80V  
µA  
Emitter Cut-Off  
Current  
IEBO  
-0.1  
-0.1  
VEB=-8V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
-1.3  
-2.5  
-1.3  
-2.5  
V
V
IC=-1A, IB=-1mA*  
IC=-2A, IB=-2mA*  
Base-Emitter  
Saturation Voltage  
-1.8  
-1.8  
V
IC=-1A, IB=-10mA*  
Base-Emitter  
Turn-On Voltage  
-1.7  
-1.7  
V
IC=-1A, VCE=-5V*  
3-250  

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