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ZTX749 PDF预览

ZTX749

更新时间: 2024-10-13 22:18:51
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管开关局域网
页数 文件大小 规格书
3页 63K
描述
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

ZTX749 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-W3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.12Is Samacsys:N
最大集电极电流 (IC):2 A基于收集器的最大容量:100 pF
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):15JESD-30 代码:R-PSIP-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):160 MHzVCEsat-Max:0.5 V
Base Number Matches:1

ZTX749 数据手册

 浏览型号ZTX749的Datasheet PDF文件第2页浏览型号ZTX749的Datasheet PDF文件第3页 
PNP SILICON PLANAR  
ZTX749  
MEDIUM POWER TRANSISTOR  
ISSUE 1 – APRIL 94  
FEATURES  
*
*
*
25 Volt VCEO  
2 Amp continuous current  
Low saturation voltage  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-35  
-25  
-5  
V
V
Peak Pulse Current  
-6  
A
Continuous Collector Current  
IC  
-2  
A
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-35  
-25  
-5  
V
V
V
IC=-100µA, IE=0  
IC=-10mA, IB=0*  
IE=-100µA, IC=0  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
-0.1  
-10  
VCB=-30V  
VCB=-30V,T  
µA  
µA  
=100°C  
Emitter Cut-Off Current IEBO  
-0.1  
VEB=-4V, IE=0  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.12  
-0.23  
-0.3  
-0.5  
V
V
IC=1A, IB=-100mA*  
IC=2A, IB=-200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
-0.9  
-1.25  
V
IC=1A, IB=-100mA*  
Base-Emitter  
Turn-On Voltage  
VBE(on)  
-0.8  
-1  
V
IC=-1A, VCE=-2V*  
Static Forward Current hFE  
Transfer Ratio  
70  
100  
75  
200  
200  
150  
50  
IC=-50mA, VCE=-2V*  
IC=-1A, VCE=-2V*  
IC=-2A, VCE=-2V*  
IC=-6A, VCE=-2V*  
300  
15  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3-254  

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