ZTX718

更新时间： 2024-09-09 07:42:51

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管局域网
页数	文件大小	规格书
4页	89K
描述
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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数据手册

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ZTX718 数据手册

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ZTX718

ISSUE 4– MAY 1998

FEATURES

6A Peak pulse current

Excellent h_FEcharacteristics up to 6A (pulsed)

low saturation voltage

I_CCont 2.5A

APPLICATIONS

Power MOSFET gate driver in conjunction with

complementary ZTX618

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-20

Collector-Emitter Voltage

Emitter-Base Voltage

-20

-5

Peak Pulse Current

-6

-2.5

Continuous Collector Current

Base Current

I_C

I_B

-500

°C

Practical Power Dissipation*

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_totp

P_tot

1.5

T_j:T_stg

-55 to +200

* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

12 3 4

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