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ZTX749-D27Z PDF预览

ZTX749-D27Z

更新时间： 2024-11-26 06:54:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 40K
描述
Transistor

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ZTX749-D27Z 数据手册

 浏览型号ZTX749-D27Z的Datasheet PDF文件第2页浏览型号ZTX749-D27Z的Datasheet PDF文件第3页 
ZTX749  
PNP Low Saturation Transistor  
•
This device are designed with high current gain and low saturation  
voltage with collector currents up to 2A continuous.  
C
TO-226  
B
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Value  
-25  
-35  
-5  
Units  
V
V
V
V
Collector-Emitter Voltage  
CEO  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
V
CBO  
EBO  
V
I
- Continuous  
-2  
A
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
°C  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150°C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= -10mA  
-25  
-35  
-5  
V
V
V
CEO  
CBO  
EBO  
C
C
E
= -100µA  
= -100µA  
I
V
V
= -30V  
= -30V, T = 100°C  
-100  
-10  
nA  
µA  
CBO  
CB  
CB  
A
I
Emitter Cutoff Current  
V
= -4V  
-100  
nA  
EBO  
EB  
On Characteristics*  
h
DC Current Gain  
I
I
I
I
= -50mA, V = -2V  
70  
100  
75  
FE  
C
C
C
C
CE  
= -1A, V = -2V  
300  
CE  
= -2A, V = -2V  
CE  
= -6A, V = -2V  
15  
CE  
V
(sat)  
Collector-Emitter Saturation Voltage  
I
I
= -1A, I = -100mA  
-300  
-500  
mV  
CE  
C
C
B
= -2A, I = -200mA  
B
V
V
(sat)  
(on)  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
= -1A, I = -100mA  
-1.25  
-1  
V
V
BE  
C
C
B
= -1A, V = -2V  
BE  
CE  
Small-Signal Characteristics  
C
Output Capacitance  
Transition Frequency  
V
= -10V, I = 0, f = 1MHz  
100  
PF  
obo  
CB  
E
f
I
= 1-00mA, V = -5V  
100  
T
C
CE  
f = 100MHz  
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%  
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
1
Units  
P
Total Device Dissipation  
Thermal Resistance, Junction to Ambient  
W
D
R
125  
°C/W  
θJA  
©2003 Fairchild Semiconductor Corporation  
Rev. A, August 2003  
123

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