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ZTX718STZ PDF预览

ZTX718STZ

更新时间: 2024-11-21 13:16:15
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管局域网
页数 文件大小 规格书
4页 89K
描述
Transistor

ZTX718STZ 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:15 weeks风险等级:5.57
JESD-609代码:e3端子面层:Matte Tin (Sn)
Base Number Matches:1

ZTX718STZ 数据手册

 浏览型号ZTX718STZ的Datasheet PDF文件第2页浏览型号ZTX718STZ的Datasheet PDF文件第3页浏览型号ZTX718STZ的Datasheet PDF文件第4页 
PNP SILICON PLANAR MEDIUM POWER  
HIGH GAIN TRANSISTOR  
ZTX718  
ISSUE 4– MAY 1998  
FEATURES  
*
*
*
*
6A Peak pulse current  
Excellent hFE characteristics up to 6A (pulsed)  
low saturation voltage  
IC Cont 2.5A  
C
B
E
APPLICATIONS  
*
Power MOSFET gate driver in conjunction with  
complementary ZTX618  
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-20  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-20  
V
-5  
V
Peak Pulse Current  
-6  
-2.5  
A
Continuous Collector Current  
Base Current  
IC  
A
IB  
-500  
mA  
W
W
°C  
Practical Power Dissipation*  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptotp  
Ptot  
1.5  
1
Tj:Tstg  
-55 to +200  
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.  

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