Datasheet > YJG55N06A

YJG55N06A

更新时间： 2024-11-21 17:01:35

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
8页	741K
描述
PDFN5060-8L

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中文翻译

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数据手册

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YJG55N06A 数据手册

RoHS

COMPLIANT

YJG55N06A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

● I_D

55A

● R_DS(ON)( at V_GS=10V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜12mΩ

General Description

● Trench Power LV MOSFET technology

● High density cell design for low RDS(ON)

● Excellent stability and uniformity

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Power management

● Portable equipment

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

8.9

T_A=25℃

5.6

T_A=100℃

T_C=25℃

Drain Current

I_D

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

180

EAS

264.5

2.2

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

0.9

Total Power Dissipation ^C

P_D

104

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

1.2

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJG55N06A

5000

10000

100000

13“ reel

1 / 8

S-E477

Rev.1.0,08-Dec-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7 8

中文翻译

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