Datasheet > YJG80GP06BQ

YJG80GP06BQ

更新时间： 2024-03-03 10:08:26

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
7页	284K
描述
PDFN5060-8L

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YJG80GP06BQ 数据手册

RoHS

COMPLIANT

YJG80GP06BQ

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-60 V

● I_D

-80 A

● R_DS(ON)( at V_GS=-10V)

● 100% UIS Tested

● 100% ▽V^DSTested

＜8.5mΩ

General Description

● Split gate trench MOSFET technology

● Low R_DS(on)& FOM

● Excellent stability and uniformity

● Moisture Sensitivity Level 3

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

● Part no. with suffix ”Q” means AEC-Q101 qualified

Applications

● Power management

● Portable equipment

● 12 and 24V Automotive systems

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

-60

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±18

-12

T_A=25℃

-7.5

-80

T_A=100℃

T_C=25℃

Drain Current

I_D

-50

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

-320

400

EAS

2.5

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

Total Power Dissipation ^C

P_D

120

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

0.8

1.04

1 / 7

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-D258

Rev.1.1,21-Dec-23

www.21yangjie.com

12 3 4 5 6 7

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