Datasheet > YJG55P03B

YJG55P03B

更新时间： 2024-11-21 15:19:31

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
7页	506K
描述
PDFN5060-8L

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中文翻译

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YJG55P03B 数据手册

RoHS

COMPLIANT

YJG55P03B

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-30 V

● I_D

-55 A

● R_DS(ON)( at V_GS=-20V)

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-4.5V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜9 mΩ

＜10.5 mΩ

＜20 mΩ

General Description

● Trench Power LV MOSFET technology

● High density cell design for Low RDS(ON)

● High Speed switching

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Battery protection

● Power management

● Load switch

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

-30

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±2 5

-10

T_A=25℃

-6.3

-55

T_A=100℃

T_C=25℃

Drain Current

I_D

-35

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

-150

100

2.5

EAS

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

Total Power Dissipation ^C

P_D

-55～+150

Junction and Storage Temperature Range

T_J,T_STG

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Steady-State

℃/W

Thermal Resistance Junction-to-Case

R_θJC

1.6

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJG55P03B

5000

10000

100000

13’’ reel

1 / 7

S-E292

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.1,8-Sep-23

12 3 4 5 6 7

中文翻译

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