Datasheet > YJG60G10BQ

YJG60G10BQ

更新时间： 2024-11-19 17:01:35

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
9页	364K
描述
PDFN5060-8L

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中文翻译

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数据手册

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YJG60G10BQ 数据手册

RoHS

COMPLIANT

YJG60G10BQ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

100V

● I_D

60A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% UIS Tested

● 100% ▽VDS Tested

＜12 mohm

＜15 mohm

General Description

● Split gate trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Part no. with suffix ”Q” means AEC-Q101 qualified

Applications

● High Frequency Switching

● Synchronous Rectification

● 12V, 24V and 48V Automotive systems

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

100

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

Tc=25℃

Drain Current

I_D

Tc=125℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

240

EAS

200

Tc=25℃

Total Power Dissipation ^C

P_D

Tc=125℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

100

1.6

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

1.3

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJG60G10BQ

YJG60G10B

5000

10000

100000

13“ reel

1 / 9

S-S4557

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,27-Jul-22

12 3 4 5 6 7...9

中文翻译

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