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YJG80G06B PDF预览

YJG80G06B

更新时间: 2024-11-21 15:18:59
品牌 Logo 应用领域
扬杰 - YANGJIE 光电二极管
页数 文件大小 规格书
6页 683K
描述
PDFN5060-8L

YJG80G06B 数据手册

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RoHS  
COMPLIANT  
YJG80G06B  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
VDS  
60V  
ID  
80A  
RDS(ON)( at VGS=10V)  
RDS(ON)( at VGS=4.5V)  
100% EAS Tested  
100% VDS Tested  
4.2 mohm  
5.2 mohm  
General Description  
Split Gate Trench MOSFET technology  
Excellent package for heat dissipation  
High density cell design for low RDS(ON)  
Moisture Sensitivity Level 1  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free  
Applications  
DC-DC Converters  
Power management functions  
Industrial and Motor Drive application  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
60  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
VGS  
±20  
80  
V
Tc=25℃  
Drain Current (Silicon limited)  
ID  
A
Tc=100℃  
50  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
320  
A
EAS  
400  
mJ  
Tc=25℃  
96  
Total Power Dissipation C  
PD  
W
Tc=100℃  
38.4  
-55+150  
Junction and Storage Temperature Range  
TJ ,TSTG  
Thermal resistance  
Parameter  
Symbol  
RθJA  
Typ  
15  
Max  
20  
Units  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Ambient D  
Thermal Resistance Junction-to-Case  
t10S  
Steady-State  
Steady-State  
45  
55  
/W  
RθJC  
1.0  
1.3  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
PREFERED P/N  
Marking  
DELIVERY MODE  
CODE  
YJG80G06B  
F1  
YJG80G06B  
5000  
10000  
100000  
13reel  
1 / 6  
S-E145  
Rev.1.1,24-Oct-23  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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