Datasheet > YJG80G06B

YJG80G06B

更新时间： 2024-03-03 10:09:55

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
6页	683K
描述
PDFN5060-8L

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数据手册

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YJG80G06B 数据手册

RoHS

COMPLIANT

YJG80G06B

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

● I_D

80A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜4.2 mohm

＜5.2 mohm

General Description

● Split Gate Trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● DC-DC Converters

● Power management functions

● Industrial and Motor Drive application

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

Tc=25℃

Drain Current (Silicon limited)

I_D

Tc=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

320

EAS

400

Tc=25℃

Total Power Dissipation ^C

P_D

Tc=100℃

38.4

-55～+150

Junction and Storage Temperature Range

T_J,T_STG

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

t≤10S

Steady-State

℃/W

R_θJC

1.0

1.3

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJG80G06B

5000

10000

100000

13“ reel

1 / 6

S-E145

Rev.1.1,24-Oct-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6

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