RoHS
COMPLIANT
YJG80G06B
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
80A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<4.2 mohm
<5.2 mohm
General Description
● Split Gate Trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● DC-DC Converters
● Power management functions
● Industrial and Motor Drive application
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
60
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
80
V
Tc=25℃
Drain Current (Silicon limited)
ID
A
Tc=100℃
50
Pulsed Drain Current A
Avalanche energy B
IDM
320
A
EAS
400
mJ
Tc=25℃
96
Total Power Dissipation C
PD
W
Tc=100℃
38.4
-55~+150
Junction and Storage Temperature Range
TJ ,TSTG
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
15
Max
20
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
t≤10S
Steady-State
Steady-State
45
55
℃/W
RθJC
1.0
1.3
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJG80G06B
F1
YJG80G06B
5000
10000
100000
13“ reel
1 / 6
S-E145
Rev.1.1,24-Oct-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com