Datasheet > YJG58G10BQ

YJG58G10BQ

更新时间： 2024-03-03 10:10:12

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
8页	377K
描述
PDFN5060-8L

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YJG58G10BQ 数据手册

RoHS

COMPLIANT

YJG58G10BQ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

100V

58A

● I_D

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

● 100% ▽V^DSTested

＜12mΩ

＜17mΩ

General Description

● Split gate trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Part no. with suffix ”Q” means AEC-Q101 qualified

Applications

● Power switching application

● Uninterruptible power supply

● DC-DC convertor

● 12V,24V and 48V Automotive system

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

100

±20

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

T_A=25℃

5.8

T_A=100℃

T_C=25℃

Drain Current

I_D

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

180

EAS

2.7

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

1.8

Total Power Dissipation ^C

P_D

100

Junction and Storage Temperature Range

T_J,T_STG

-55～+175

℃

1 / 8

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-D373

Rev.1.0,22-Nov-23

www.21yangjie.com

12 3 4 5 6 7 8

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