RoHS
COMPLIANT
YJG85G06AK
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID
85A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<3.7 mohm
<5.0 mohm
● ESD Protected up to 2.0KV(HBM)
General Description
● Split Gate Trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● DC-DC Converters
● Power management functions
● Synchronous-rectification application
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
60
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
85
V
TC=25℃
Drain Current A
ID
A
TC=100℃
54
Pulsed Drain Current B
Avalanche energy
IDM
340
A
EAS
400
mJ
Tc=25℃
110
Total Power Dissipation C
PD
W
Tc=100℃
44
-55~+150
℃
Junction and Storage Temperature Range
TJ ,TSTG
■Thermal resistance
Parameter
Symbol
Typ
Max
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
t≤10S
14
17
RθJA
℃/W
Steady-State
Steady-State
40
55
RθJC
0.85
1.1
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJG85G06AK
F1
YJG85G06AK
5000
10000
100000
13“ reel
1 / 6
S-E120
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.2,24-Oct-23