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XU1000-BD-000W

更新时间： 2024-11-06 15:58:31
品牌 Logo 应用领域
MIMIX 射频微波
页数 文件大小 规格书
5页 159K
描述
Up Converter, ROHS COMPLIANT, PLASTIC, DIE-5

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XU1000-BD-000W 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84构造：COMPONENT
最大中频频率：2000 MHz最小中频频率：
输入功率最小值（CW）：10 dBmLO 可调谐：YES
最大射频输入频率：27000 MHz最小射频输入频率：17000 MHz
射频/微波设备类型：UP CONVERTERBase Number Matches：1

XU1000-BD-000W 数据手册

 浏览型号XU1000-BD-000W的Datasheet PDF文件第2页浏览型号XU1000-BD-000W的Datasheet PDF文件第3页浏览型号XU1000-BD-000W的Datasheet PDF文件第4页浏览型号XU1000-BD-000W的Datasheet PDF文件第5页 
17.0-27.0 GHz GaAs MMIC  
Transmitter  
May 2007 - Rev 02-May-07  
U1000-BD  
Features  
Chip Device Layout  
Fundamental Transmitter  
Low DC Power Consumption  
Optional Power Bias Configuration  
0.0 dB Conversion Gain  
+12.0 dBm Third Order Intercept (IIP3)  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s 17.0-27.0 GHz GaAs MMIC transmitter  
has a small signal conversion gain of 0.0 dB with a third  
order intercept of +12.0 dBm across the band.The device is  
a single fundamental mixer followed by a single stage  
amplifier.This MMIC uses Mimix Broadband’s 0.15 µm GaAs  
PHEMT device model technology, and is based upon  
electron beam lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect and  
provide a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or eutectic  
solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and  
VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+6.0 VDC  
Supply Current (Id)  
50 mA  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+0.3 VDC  
+10 dBm  
-65 to +165 OC  
3
-55 to MTTF Table  
3
MTTF Table  
(3) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
Output Return Loss RF (S22)  
Input Return Loss LO (S11)  
Small Signal Conversion Gain IF/RF (S21)  
LO Input Drive (PLO)  
Isolation LO/RF  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
dB  
dB  
dBm  
dB  
dBm  
dBm  
VDC  
VDC  
mA  
Min.  
17.0  
17.0  
15.0  
DC  
-
-
-
-
-
-
-
Typ.  
-
-
-
-
7.0  
8.0  
0.0  
+12.0  
10.0  
+2.0  
+12.0  
+3.0  
-0.5  
23  
Max.  
27.0  
27.0  
29.0  
2.0  
-
-
-
-
-
-
1,2  
Input Power for 1 dB Compression (P1dB)  
1,2  
Input Third Order Intercept (IIP3)  
-
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg)  
Supply Current (Id) (Vd=3.0V,Vg=-0.5V Typical)  
-
-1.0  
-
+5.5  
0.0  
46  
(1) Optional power bias Vd=5.5V, Id=45mA will typically yield improved P1dB.  
(2) Measured using constant current.  
Page 1 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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