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XU1001

更新时间： 2024-09-16 03:13:39
品牌 Logo 应用领域
MIMIX 电信集成电路电信电路
页数 文件大小 规格书
8页 1444K
描述
33.0-40.0 GHz GaAs MMIC Transmitter

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中文翻译

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XU1001 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
Is Samacsys：NBase Number Matches：1

XU1001 数据手册

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33.0-40.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1001  
Features  
Chip Device Layout  
Sub-Harmonic Transmitter  
Low DC Power Consumption  
Optional Power Bias  
8.0 dB Conversion Gain  
30 dB LO/RF Isolation  
U1001  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
General Description  
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC transmitter has  
a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF  
isolation.The device has a pair of sub-harmonic mixers  
configured to form an image reject mixer which requires an  
LO at 15.5-21.5 GHz.This is followed by a two stage LNA.The  
image reject mixer reduces the need for unwanted sideband  
filtering before the power amplifier.The use of the sub-  
harmonic mixer makes the provision of the LO easier than for  
fundamental mixers at these frequencies. I and Q mixer inputs  
are provided and an external 90 degree hybrid is required to  
select the desired sideband.This MMIC uses Mimix  
Broadband’s 0.15 µm GaAs PHEMT device model technology,  
and is based upon electron beam lithography to ensure high  
repeatability and uniformity.The chip has surface passivation  
to protect and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive epoxy or  
eutectic solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and  
VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
+6.0 VDC  
70 mA  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+0.3 VDC  
+10 dBm  
-65 to +165 OC  
4
-55 to MTTF Table  
4
MTTF Table  
(4) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
Min.  
34.0  
33.0  
15.5  
DC  
Typ.  
-
-
-
-
12.0  
8.0/8.0  
+12.0  
Max.  
40.0  
40.0  
21.5  
3.0  
-
-
-
-
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
Output Return Loss RF (S22)  
-
3
dB  
3.0/3.0  
-
8.0/5.0 12.0/12.0  
Small Signal Conversion Gain IF/RF (S21) (USB/LSB)  
LO Input Drive (PLO)  
dBm  
dBc  
dB  
dBm  
VDC  
VDC  
mA  
3
Image Rejection (USB/LSB)  
-
-
30.0  
+3.0  
+3.0  
-0.5  
30  
-
-
Isolation LO/RF @ LOX2  
Input Power for 1 dB Compression (P1dB)  
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg)  
1,2  
-
-1.0  
-
+5.5  
0.0  
60  
Supply Current (Id) (Vd=3.0V,Vg=-0.5V Typical)  
(1) Optional power bias Vd=5.5V, Id=60mA will typically yield improved P1dB.  
(2) Measured using constant current.  
(3) Min/Max limits over 33.0-39.5 GHz.  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
12345678

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