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XU1002-BD-000V

更新时间： 2024-11-02 03:13:39
品牌 Logo 应用领域
MIMIX 射频和微波射频上变频器射频下变频器微波上变频器微波下变频器
页数 文件大小 规格书
8页 236K
描述
18.0-25.0 GHz GaAs MMIC Transmitter

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XU1002-BD-000V 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.75Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
最大中频频率：3000 MHz最小中频频率：
输入功率最小值（CW）：LO 可调谐：YES
最大射频输入频率：25000 MHz最小射频输入频率：18000 MHz
射频/微波设备类型：UP CONVERTERBase Number Matches：1

XU1002-BD-000V 数据手册

 浏览型号XU1002-BD-000V的Datasheet PDF文件第2页浏览型号XU1002-BD-000V的Datasheet PDF文件第3页浏览型号XU1002-BD-000V的Datasheet PDF文件第4页浏览型号XU1002-BD-000V的Datasheet PDF文件第5页浏览型号XU1002-BD-000V的Datasheet PDF文件第6页浏览型号XU1002-BD-000V的Datasheet PDF文件第7页 
18.0-25.0 GHz GaAs MMIC  
Transmitter  
August 2007 - Rev 20-Aug-07  
U1002-BD  
Features  
Chip Device Layout  
Sub-harmonic Transmitter  
Integrated IR Mixer, LO Buffer & Output Amplifier  
+20.0 dBm Output Third Order Intercept (OIP3)  
2.0 dBm LO Drive Level  
15.0 dB Image Rejection, 10.0 dB Conversion Gain  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
General Description  
Mimix Broadband’s 18.0-25.0 GHz GaAs MMIC transmitter has a  
+20.0 dBm output third order intercept and 15.0 dB image  
rejection across the band.This device is an image reject  
sub-harmonic anti-parallel diode mixer followed by a balanced two  
stage output amplifier and includes an integrated LO buffer  
amplifier.The image reject mixer reduces the need for unwanted  
sideband filtering before the power amplifier.The use of a  
sub-harmonic mixer makes the provision of the LO easier than for  
fundamental mixers at these frequencies. I and Q mixer inputs are  
provided and an external 90 degree hybrid is required to select the  
desired sideband.This MMIC uses Mimix Broadband’s 0.15 µm GaAs  
PHEMT device model technology, and is based upon electron  
beam lithography to ensure high repeatability and uniformity.The  
chip has surface passivation to protect and provide a rugged part  
with backside via holes and gold metallization to allow either a  
conductive epoxy or eutectic solder die attach process.This device  
is well suited for Millimeter-wave Point-to-Point Radio, LMDS,  
SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+4.5 VDC  
Supply Current (Id1,Id2)  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
320, 165 mA  
+0.3 VDC  
0.0 dBm  
-65 to +165 OC  
3
-55 to MTTF Table  
3
MTTF Table  
(3) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
Min.  
18.0  
18.0  
7.5  
DC  
-
-
-
-
-
-
-
Typ.  
-
-
-
-
16.0  
10.0  
+2.0  
15.0  
10.0  
+20.0  
+3.5  
+4.0  
-0.3  
230  
116  
Max.  
25.0  
21.0  
11.5  
3.0  
-
-
-
-
-
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
Output Return Loss RF (S22)  
Small Signal Conversion Gain IF/RF (S21)  
LO Input Drive (PLO)  
2
dB  
dBm  
dBc  
dB  
dBm  
VDC  
VDC  
VDC  
mA  
2
Image Rejection  
Isolation LO/RF @ LOx1/LOx2  
Output Third Order Intercept (OIP3)  
Drain Bias Voltage (Vd1)  
Drain Bias Voltage (Vd2)  
Gate Bias Voltage (Vg1,2)  
1,2  
-
+4.5  
+4.5  
+0.1  
280  
140  
-
-1.2  
-
-
Supply Current (Id1) (Vd1=3.5V,Vg=-0.3V Typical)  
Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)  
mA  
(1) Measured using constant current.  
(2) Measured using LO Input drive level of +2.0 dBm.  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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