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XU1003-QD-0N0T

更新时间： 2024-11-02 03:13:39
品牌 Logo 应用领域
MIMIX 射频和微波射频上变频器射频下变频器微波上变频器微波下变频器
页数 文件大小 规格书
6页 323K
描述
19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm

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XU1003-QD-0N0T 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
最大中频频率：3000 MHz最小中频频率：
输入功率最小值（CW）：LO 可调谐：YES
最大射频输入频率：26000 MHz最小射频输入频率：19000 MHz
射频/微波设备类型：UP CONVERTERBase Number Matches：1

XU1003-QD-0N0T 数据手册

 浏览型号XU1003-QD-0N0T的Datasheet PDF文件第2页浏览型号XU1003-QD-0N0T的Datasheet PDF文件第3页浏览型号XU1003-QD-0N0T的Datasheet PDF文件第4页浏览型号XU1003-QD-0N0T的Datasheet PDF文件第5页浏览型号XU1003-QD-0N0T的Datasheet PDF文件第6页 
19.0-26.0 GHz GaAsTransmitter  
QFN, 7x7mm  
August 2006 - Rev 31-Aug-06  
U1003-QD  
Features  
Chip Device Layout  
Sub-harmonic Transmitter  
Integrated IR Mixer, LO Buffer & Output Amplifier  
2.0 dBm LO Drive Level  
15.0 dB Image Rejection, 10.0 dB Conversion Gain  
7x7 mm, QFN  
General Description  
Mimix Broadband’s 19.0-26.0 GHz GaAs MMIC transmitter has a  
+20.0 dBm output third order intercept and 15.0 dB image  
rejection across the band.This device is an image reject  
sub-harmonic anti-parallel diode mixer followed by a balanced  
two stage output amplifier and includes an integrated LO buffer  
amplifier.The image reject mixer reduces the need for  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+5.0 VDC  
unwanted sideband filtering before the power amplifier.The  
use of a sub-harmonic mixer makes the provision of the LO  
easier than for fundamental mixers at these frequencies. I and Q  
mixer inputs are provided and an external 90 degree hybrid is  
required to select the desired sideband.This MMIC uses Mimix  
Broadband’s 0.15 µm GaAs PHEMT device model technology,  
and is based upon electron beam lithography to ensure high  
repeatability and uniformity.The device comes in a 7x7mm QFN  
surface mount laminate package that is RoHS compliant.This  
device is well suited for Millimeter-wave Point-to-Point Radio,  
LMDS, SATCOM and VSAT applications.  
Supply Current (Id1,Id2)  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
320, 165 mA  
+0.5 VDC  
0.0 dBm  
-65 to +165 OC  
1
-55 to MTTF Table  
1
MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Min.  
19.0  
19.0  
8.0  
DC  
-
-
-
-
-
-
-
Typ.  
-
-
-
-
14.0  
10.0  
+2.0  
20.0  
-12.0  
+23.0  
+4.0  
+4.0  
-0.1  
230  
116  
Max.  
26.0  
26.0  
14.5  
3.0  
-
-
-
-
-
Frequency Range (IF)  
Output Return Loss RF (S22)  
Small Signal Conversion Gain IF/RF (S21)  
LO Input Drive (PLO)  
Image Rejection  
2xLO Leakage @ RF  
Output Third Order Intercept (OIP3)  
Drain Bias Voltage (Vd1)  
Drain Bias Voltage (Vd2)  
Gate Bias Voltage (Vg1,2)  
Supply Current (Id1) (Vd1=4.0V,Vg=-0.1V Typical)  
Supply Current (Id2) (Vd2=4.0V,Vg=-0.1V Typical)  
dB  
dBm  
dBc  
dBm  
dBm  
VDC  
VDC  
VDC  
mA  
-
+4.5  
+4.5  
+0.3  
280  
140  
-
-1.2  
-
-
mA  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

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