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XU1006-BD

更新时间： 2024-11-02 03:13:39
品牌 Logo 应用领域
MIMIX 射频和微波射频上变频器射频下变频器微波上变频器微波下变频器
页数 文件大小 规格书
1页 1447K
描述
35.0-42.0 GHz GaAs MMIC Transmitter

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XU1006-BD 技术参数

是否Rohs认证： 符合生命周期：Transferred
Reach Compliance Code：unknown风险等级：5.12
Is Samacsys：N构造：COMPONENT
最大中频频率：4000 MHz最小中频频率：
LO 可调谐：YES最大射频输入频率：42000 MHz
最小射频输入频率：35000 MHz射频/微波设备类型：UP CONVERTER
上转换增益-最小值：3 dBBase Number Matches：1

XU1006-BD 数据手册

  
35.0-42.0 GHz GaAs MMIC  
Transmitter  
December 2007 - Rev 12-Dec-07  
U1006-BD  
Features  
Sub-harmonic Transmitter  
Integrated Mixer, LO Doubler/Buffer & Output Amplifier  
+17.0 dBm Output Third Order Intercept (OIP3)  
4.0 dBm LO Drive Level  
3.0 dB Conversion Gain  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
General Description  
Mimix Broadband’s 35.0-42.0 GHz GaAs transmitter is an integrated  
multifunction chip which provides 25 dB of linear gain control across  
the band. The MMIC has a +17.0 dBm output third order intercept  
across the band.This device is a balanced, resistive pHEMT mixer  
followed by a series of cascaded gain and attenuator stages. The  
device also includes an integrated LO doubler and LO buffer amplifier  
which make the provision of the LO easier than for fundamental mixers  
at these frequencies. I and Q mixer inputs are provided and an external  
90 degree hybrid is required to select the desired sideband.This MMIC  
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model  
technology, and is based upon electron beam lithography to ensure  
high repeatability and uniformity.The chip has surface passivation to  
protect and provide a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or eutectic solder die  
attach process.This device is well suited for Millimeter-wave  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+6.0 VDC  
Supply Current (Id1,Id2)  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
300, 200 mA  
+0.3 VDC  
+10.0 dBm  
-65 to +165 O  
C
3
-55 to MTTF Table  
3
MTTF Table  
(3) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
Output Return Loss RF (S22)  
Small Signal Conversion Gain IF/RF (S21)  
LO Input Drive (PLO)  
Leakage @ RF  
Output Third Order Intercept (OIP3)  
Drain Bias Voltage (Vd1,2)  
Gate Bias Voltage (Vg1,2)  
Units  
GHz  
GHz  
GHz  
dB  
Min.  
35.0  
16.0  
DC  
-
-
-
-
Typ.  
-
-
Max.  
42.0  
23.0  
4.0  
-
-
-
-
-
+5.5  
+0.1  
-0  
0.0  
180  
165  
-
10.0  
3.0  
4.0  
-11.0  
+17.0  
+4.0  
-0.3  
-0.5  
-
dB  
dBm  
dBm  
dBm  
VDC  
VDC  
VDC  
Vc  
-
-
-1.2  
-0.6  
-2.0  
-
Gate Bias Voltage (Vg3) Mixer, Doubler  
Dynamic Range Control  
Supply Current (Id1) (Vd1=4.0V,Vg=-0.3V Typical)  
Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)  
mA  
150  
100  
-
mA  
Page 1 of 1  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
1

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