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XU1003-BD-EV1

更新时间： 2024-11-02 03:13:39
品牌 Logo 应用领域
MIMIX /
页数 文件大小 规格书
7页 220K
描述
19.0-26.0 GHz GaAs MMIC Transmitter

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XU1003-BD-EV1 数据手册

 浏览型号XU1003-BD-EV1的Datasheet PDF文件第2页浏览型号XU1003-BD-EV1的Datasheet PDF文件第3页浏览型号XU1003-BD-EV1的Datasheet PDF文件第4页浏览型号XU1003-BD-EV1的Datasheet PDF文件第5页浏览型号XU1003-BD-EV1的Datasheet PDF文件第6页浏览型号XU1003-BD-EV1的Datasheet PDF文件第7页 
19.0-26.0 GHz GaAs MMIC  
Transmitter  
August 2007 - Rev 20-Aug-07  
U1003-BD  
Features  
Chip Device Layout  
Sub-harmonic Transmitter  
Integrated IR Mixer, LO Buffer & Output Amplifier  
2.0 dBm LO Drive Level  
15.0 dB Image Rejection, 10.0 dB Conversion Gain  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
General Description  
Mimix Broadband’s 19.0-26.0 GHz GaAs MMIC transmitter has a  
+20.0 dBm output third order intercept and 15.0 dB image  
rejection across the band.This device is an image reject  
sub-harmonic anti-parallel diode mixer followed by a balanced  
two stage output amplifier and includes an integrated LO buffer  
amplifier.The image reject mixer reduces the need for  
unwanted sideband filtering before the power amplifier.The  
use of a sub-harmonic mixer makes the provision of the LO  
easier than for fundamental mixers at these frequencies. I and Q  
mixer inputs are provided and an external 90 degree hybrid is  
required to select the desired sideband.This MMIC uses Mimix  
Broadband’s 0.15 µm GaAs PHEMT device model technology,  
and is based upon electron beam lithography to ensure high  
repeatability and uniformity.The chip has surface passivation to  
protect and provide a rugged part with backside via holes and  
gold metallization to allow either a conductive epoxy or  
eutectic solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+5.0 VDC  
Supply Current (Id1,Id2)  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
320, 165 mA  
+0.5 VDC  
0.0 dBm  
-65 to +165 OC  
1
-55 to MTTF Table  
1
MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
Min.  
19.0  
19.0  
8.0  
DC  
-
-
-
-
-
-
-
Typ.  
-
-
-
-
14.0  
10.0  
+2.0  
15.0  
-12.0  
TBD  
+4.0  
+4.0  
-0.1  
230  
116  
Max.  
26.0  
26.0  
14.5  
3.0  
-
-
-
-
-
Frequency Range (IF)  
Output Return Loss RF (S22)  
Small Signal Conversion Gain IF/RF (S21)  
LO Input Drive (PLO)  
Image Rejection  
Isolation 2xLO to RF  
Output Third Order Intercept (OIP3)  
Drain Bias Voltage (Vd1)  
Drain Bias Voltage (Vd2)  
Gate Bias Voltage (Vg1,2)  
Supply Current (Id1) (Vd1=4.0V,Vg=-0.1V Typical)  
Supply Current (Id2) (Vd2=4.0V,Vg=-0.1V Typical)  
dB  
dBm  
dBc  
dB  
dBm  
VDC  
VDC  
VDC  
mA  
-
+4.5  
+4.5  
+0.3  
280  
140  
-
-1.2  
-
-
mA  
Page 1 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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