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XU1001-BD-000V

更新时间： 2024-02-15 05:45:10
品牌 Logo 应用领域
MIMIX 射频和微波射频上变频器射频下变频器微波上变频器微波下变频器
页数 文件大小 规格书
8页 292K
描述
33.0-40.0 GHz GaAs MMIC Transmitter

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XU1001-BD-000V 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
最大中频频率：3000 MHz最小中频频率：
输入功率最小值（CW）：10 dBmLO 可调谐：YES
最大射频输入频率：40000 MHz最小射频输入频率：33000 MHz
射频/微波设备类型：UP CONVERTER上转换增益-最小值：3 dB
Base Number Matches：1

XU1001-BD-000V 数据手册

 浏览型号XU1001-BD-000V的Datasheet PDF文件第2页浏览型号XU1001-BD-000V的Datasheet PDF文件第3页浏览型号XU1001-BD-000V的Datasheet PDF文件第4页浏览型号XU1001-BD-000V的Datasheet PDF文件第5页浏览型号XU1001-BD-000V的Datasheet PDF文件第6页浏览型号XU1001-BD-000V的Datasheet PDF文件第7页 
33.0-40.0 GHz GaAs MMIC  
Transmitter  
April 2007 - Rev 19-Apr-07  
U1001-BD  
Features  
Chip Device Layout  
Sub-Harmonic Transmitter  
Low DC Power Consumption  
Optional Power Bias  
8.0 dB Conversion Gain  
30 dB LO/RF Isolation  
U1001  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
General Description  
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC transmitter has  
a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF  
isolation.The device has a pair of sub-harmonic mixers  
configured to form an image reject mixer which requires an  
LO at 15.5-21.5 GHz.This is followed by a two stage LNA.The  
image reject mixer reduces the need for unwanted sideband  
filtering before the power amplifier.The use of the  
Absolute Maximum Ratings  
sub-harmonic mixer makes the provision of the LO easier than  
for fundamental mixers at these frequencies. I and Q mixer  
inputs are provided and an external 90 degree hybrid is  
required to select the desired sideband.This MMIC uses Mimix  
Broadband’s 0.15 µm GaAs PHEMT device model technology,  
and is based upon electron beam lithography to ensure high  
repeatability and uniformity.The chip has surface passivation  
to protect and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive epoxy or  
eutectic solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and  
VSAT applications.  
Supply Voltage (Vd)  
Supply Current (Id)  
+6.0 VDC  
70 mA  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+0.3 VDC  
+10 dBm  
-65 to +165 OC  
4
-55 to MTTF Table  
4
MTTF Table  
(4) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
Output Return Loss RF (S22)  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
Min.  
34.0  
33.0  
15.5  
DC  
Typ.  
-
-
-
-
12.0  
8.0/8.0  
+12.0  
Max.  
40.0  
40.0  
21.5  
3.0  
-
-
-
-
-
3
Small Signal Conversion Gain IF/RF (S21) (USB/LSB)  
LO Input Drive (PLO)  
dB  
3.0/3.0  
-
8.0/5.0 12.0/12.0  
dBm  
dBc  
dB  
dBm  
VDC  
VDC  
mA  
3
Image Rejection (USB/LSB)  
Isolation LO/RF @ LOX2  
Input Power for 1 dB Compression (P1dB)  
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg)  
-
-
30.0  
+3.0  
+3.0  
-0.5  
30  
-
-
1,2  
-
-1.0  
-
+5.5  
0.0  
60  
Supply Current (Id) (Vd=3.0V,Vg=-0.5V Typical)  
(1) Optional power bias Vd=5.5V, Id=60mA will typically yield improved P1dB.  
(2) Measured using constant current.  
(3) Min/Max limits over 33.0-39.5 GHz.  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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