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XU1002-QD-0N0T

更新时间： 2024-02-13 14:07:47
品牌 Logo 应用领域
MIMIX 射频和微波射频上变频器射频下变频器微波上变频器微波下变频器
页数 文件大小 规格书
7页 319K
描述
17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm

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XU1002-QD-0N0T 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.75Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
最大中频频率：3000 MHz最小中频频率：
输入功率最小值（CW）：LO 可调谐：YES
最大射频输入频率：25000 MHz最小射频输入频率：17000 MHz
射频/微波设备类型：UP CONVERTERBase Number Matches：1

XU1002-QD-0N0T 数据手册

 浏览型号XU1002-QD-0N0T的Datasheet PDF文件第2页浏览型号XU1002-QD-0N0T的Datasheet PDF文件第3页浏览型号XU1002-QD-0N0T的Datasheet PDF文件第4页浏览型号XU1002-QD-0N0T的Datasheet PDF文件第5页浏览型号XU1002-QD-0N0T的Datasheet PDF文件第6页浏览型号XU1002-QD-0N0T的Datasheet PDF文件第7页 
17.0-25.0 GHz GaAsTransmitter  
QFN, 7x7mm  
November 2006 - Rev 21-Nov-06  
U1002-QD  
Features  
Sub-harmonic Transmitter  
Integrated IR Mixer, LO Buffer & Output Amplifier  
+13 dBm P1dB  
2.0 dBm LO Drive Level  
20.0 dB Image Rejection, 9.0 dB Conversion Gain  
7x7 mm, QFN  
General Description  
Mimix Broadband’s 17.0-25.0 GHz GaAs MMIC transmitter has a  
+13.0 dBm output P1dB and 20.0 dB image rejection across the  
band.This device is an image reject sub-harmonic anti-parallel  
diode mixer followed by a balanced two stage output amplifier  
and includes an integrated LO buffer amplifier.The image reject  
mixer reduces the need for unwanted sideband filtering before  
the power amplifier.The use of a sub-harmonic mixer makes the  
provision of the LO easier than for fundamental mixers at these  
frequencies. I and Q mixer inputs are provided and an external  
90 degree hybrid is required to select the desired sideband.This  
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device  
model technology, and is based upon electron beam  
lithography to ensure high repeatability and uniformity.The  
device comes in a 7x7mm QFN surface mount laminate  
package that is RoHS compliant.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+5.0 VDC  
Supply Current (Id1,Id2)  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
320, 165 mA  
+0.5 VDC  
0.0 dBm  
-65 to +165 OC  
1
-55 to MTTF Table  
1
MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Min.  
17.0  
17.0  
7.0  
DC  
-
-
-
-
-
-
-
Typ.  
-
-
-
-
Max.  
25.0  
21.0  
14.0  
3.0  
-
-
-
-
-
Frequency Range (IF)  
Output Return Loss RF (S22)  
Small Signal Conversion Gain IF/RF (S21)  
LO Input Drive (PLO)  
Image Rejection  
2xLO Leakage @ RF  
Output Third Order Intercept (OIP3)  
Drain Bias Voltage (Vd1)  
Drain Bias Voltage (Vd2)  
Gate Bias Voltage (Vg1,2)  
Supply Current (Id1) (Vd1=4.0V,Vg=-0.1V Typical)  
Supply Current (Id2) (Vd2=4.0V,Vg=-0.1V Typical)  
14.0  
9.0  
dB  
dBm  
dBc  
dBm  
dBm  
VDC  
VDC  
VDC  
mA  
+2.0  
20.0  
-10.0  
+23.0  
+4.0  
+4.0  
-0.1  
230  
116  
-
+4.5  
+4.5  
+0.3  
280  
140  
-
-1.2  
-
-
mA  
Page 1 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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