Composite Transistors
XP6214
Silicon NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.1±0.1
0.425
1.25±0.1
0.425
1
6
Features
■
2
3
5
4
●
Two elements incorporated into one package.
(Transistors with built-in resistor)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
UN1214 × 2 elements
■
●
0.2±0.1
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC–88
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
IC
Ratings
Unit
V
S–Mini Type Package (6–pin)
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
50
50
Rating
of
V
Marking Symbol: AA
Internal Connection
element
100
mA
mW
˚C
PT
150
Overall Junction temperature
Storage temperature
Tj
150
Tr1
1
6
5
4
Tstg
–55 to +150
˚C
2
3
Tr2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
VCBO
Conditions
min
50
typ
max
Unit
V
Collector to base voltage
IC = 10µA, IE = 0
Collector to emitter voltage
VCEO
ICBO
ICEO
IEBO
hFE
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
50
V
0.1
0.5
0.2
µA
µA
mA
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
80
hFE (small/large)*1 VCE = 10V, IC = 5mA
0.5
0.99
Collector to emitter saturation voltage VCE(sat)
IC = 10mA, IB = 0.3mA
0.25
0.2
V
V
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
VOH
VOL
fT
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 2.5V, RL = 1kΩ
VCB = 10V, IE = –2mA, f = 200MHz
4.9
V
150
10
MHz
kΩ
R1
–30%
0.17
+30%
0.25
Resistance ratio
R1/R2
0.21
*1 Ratio between 2 elements
1