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XP4683

更新时间: 2024-11-01 22:11:19
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
5页 61K
描述
NPN(PNP) epitaxial planer transistor

XP4683 技术参数

生命周期:Obsolete零件包装代码:SC-88
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.015 A基于收集器的最大容量:1 pF
集电极-发射极最大电压:20 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):40最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN AND PNP
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):650 MHz
Base Number Matches:1

XP4683 数据手册

 浏览型号XP4683的Datasheet PDF文件第2页浏览型号XP4683的Datasheet PDF文件第3页浏览型号XP4683的Datasheet PDF文件第4页浏览型号XP4683的Datasheet PDF文件第5页 
Composite Transistors  
XP4683  
NPN epitaxial planer transistor (Tr1)  
PNP epitaxial planer transistor (Tr2)  
Unit: mm  
For high-frequency amplification (Tr1)  
For general amplification (Tr2)  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
1
6
2
3
5
4
Features  
Two elements incorporated into one package.  
Reduction of the mounting area and assembly cost by one half.  
Basic Part Number of Element  
2SC2404+2SB709A  
0.2±0.1  
1 : Emitter (Tr1)  
2 : Base (Tr1)  
3 : Collector (Tr2) 6 : Collector (Tr1)  
EIAJ : SC–88  
4 : Emitter (Tr2)  
5 : Base (Tr2)  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
S–Mini Type Package (6–pin)  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Peak collector current  
Total power dissipation  
Junction temperature  
Storage temperature  
30  
20  
V
Marking Symbol: ER  
Internal Connection  
Tr1  
3
V
15  
mA  
V
VCBO  
VCEO  
VEBO  
IC  
–60  
Tr1  
1
2
3
6
5
4
–50  
V
–7  
V
Tr2  
–100  
–200  
150  
mA  
mA  
mW  
˚C  
Tr2  
ICP  
PT  
Tj  
150  
Overall  
Tstg  
–55 to +150  
˚C  
1

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