Datasheet > XP05555(XP5555)

XP05555(XP5555)

更新时间： 2024-11-29 23:33:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	68K
描述
XP05555 (XP5555) - Composite Transistors

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中文翻译

获取价格

数据手册

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XP05555(XP5555) 数据手册

Composite Transistors

XP05555 (XP5555)

Silicon NPN epitaxial planer transistor

Unit: mm

For high speed switching

2.1 0.1

0.425

1.25 0.1

0.425

Features

Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

2SC4782 × 2 elements

0.2 0.1

Absolute Maximum Ratings (Ta=25˚C)

1 : Emitter (Tr1)

2 : Base (Tr1)

3 : Base (Tr2)

4 : Collector (Tr2)

5 : Emitter (Tr2)

6 : Collector (Tr1)

EIAJ : SC–88

Parameter

Symbol

V_CBO

V_CES

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Peak collector current

Total power dissipation

S–Mini Type Package (6–pin)

Rating

Marking Symbol: EO

Internal Connection

element

200

˚C

I_CP

300

P_T

150

Tr1

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

˚C

Tr2

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

I_EBO

h_FE

Conditions

min

typ

max

0.1

200

0.25

1.0

500

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 10V, I_E= 0

V_EB= 4V, I_C= 0

µA

Forward current transfer ratio

V_CE= 1V, I_C= 10mA

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 10mA, I_B= 1mA

0.17

0.76

200

I_C= 10mA, I_B= 1mA

Transition frequency

Collector output capacitance

Turn-on time

f_T

V_CB= 10V, I_E= –10mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

MHz

C_ob

t_on

t_off

t_stg

Turn-off time

Storage time

^*1Switching time measuring circuit

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

中文翻译

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